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Method for forming dielectric film with low k-value

A technology of dielectric film and flow, which is applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc., can solve the problems of poor electrical properties of dielectric films, and achieve the effect of avoiding excessive damage and reducing roughness

Active Publication Date: 2011-07-13
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the electrical properties of other metal films or dielectric films subsequently formed on the surface of the low-k dielectric film formed by the existing process are relatively poor

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  • Method for forming dielectric film with low k-value
  • Method for forming dielectric film with low k-value
  • Method for forming dielectric film with low k-value

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Embodiment Construction

[0013] The inventors have found that the reason why the electrical properties of other metal films or dielectric films formed on the surface of the low-k dielectric film formed by the existing process are relatively poor is that the low-k dielectric film formed by the existing process is rough The roughness (Roughness Value) is relatively large, and the low-k value dielectric film with large roughness is due to the formation of a large number of dangling bonds (-OH bond, -COH bond or - H bond), the dangling bond forms a Si-OH structure, Si-COH structure or Si-H structure, so that the surface roughness (Roughness Value) of the formed low-k value dielectric film is large, and the roughness of the dielectric film is large, As a result, the electrical properties of other metal films or dielectric films subsequently formed on the surface of the low-k dielectric film are relatively poor.

[0014] For this reason, the inventor of the present invention proposes an optimized low-k valu...

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Abstract

The invention provides a method for forming a dielectric film with a low k-value. The method comprises the following steps: providing a substrate, wherein, the dielectric film with a low k-value is formed on the surface of the substrate; and carrying out plasma treatment on the dielectric film with a low k-value. The method has the advantages that dangling bonds are eliminated through plasma treatment on the surface of the dielectric film with a low k-value, and plasma damage is repaired by utilizing repair ions, thus effectively lowering the roughness value of the dielectric film with a low k-value.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a low-k dielectric film. Background technique [0002] In the VLSI process, silicon dioxide with specific thermal stability and moisture resistance has always been the main insulating material used between metal interconnection lines, and metal aluminum is the main material for circuit interconnection wires in chips. However, with the miniaturization of components and the increase of integration, the number of interconnection wires in the circuit continues to increase, and the parasitic effects of resistance (R) and capacitance (C) in the interconnection wire structure increase, and the increase of parasitic effects Cause serious transmission delay (RC Delay), the transmission delay becomes the main factor that limits the signal transmission speed in the circuit in 130nm and more advanced technologies. [0003] Therefore, in the prior art, a new lo...

Claims

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Application Information

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IPC IPC(8): H01L21/768
Inventor 李景伦
Owner SEMICON MFG INT (SHANGHAI) CORP