Light emitting diode array structure and manufacturing method thereof

Abstract

The invention discloses a light emitting diode array structure and a manufacturing method thereof. The manufacturing method of the light emitting diode array structure at least comprises the following steps of: providing a temporary substrate; forming a plurality of first light emitting laminated layers and second light emitting laminated layers in sequence; forming a first insulating layer to cover a part of the first light emitting laminated layers; forming a wire on the first insulating layer and electrically connecting the wire with the first light emitting laminated layers and the second light emitting laminated layers; forming a second insulating layer to completely cover the first light emitting laminated layers, the wire and part of second light emitting laminated layers; forming a metal connecting layer on the second insulating layer and electrically connecting the metal connecting layer with the second light emitting laminated layers; forming a conductive substrate on the metal connecting layer; removing the temporary substrate; and forming a first electrode to connect the first light emitting laminated layers so as to form a series circuit structure by the first light emitting laminated layers and the second light emitting laminated layers.

Description

technical field [0001] The invention relates to a light emitting diode array structure and a manufacturing method thereof. Background technique [0002] The light-emitting principle of light-emitting diodes (LEDs) is to use the energy difference between electrons moving between n-type semiconductors and p-type semiconductors to release energy in the form of light. This light-emitting principle is different from incandescent lamps. principle, so light-emitting diodes are called cold light sources. In addition, light-emitting diodes have the advantages of high durability, long life, light weight, and low power consumption. Therefore, today's lighting market places high hopes on light-emitting diodes as a new generation of lighting tools. [0003] Traditional array light-emitting diodes such as figure 1 As shown, including a sapphire substrate 101 , a plurality of light-emitting stacks 100 are formed on the sapphire substrate 101 , and a buffer layer 102 can be selectively fo...

AI Technical Summary

Problems solved by technology

However, in order to form a structure with the n-type semiconductor layer facing up (n side up), the sapphire substrate needs to be ground or laser peeled off, which will destroy the formed electrical connection structure, thus causing difficulties in the process

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