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Plasma induced damage (PID) detection structure and manufacture method thereof

A technology of damage detection and manufacturing method, which is applied in the fields of semiconductor/solid-state device manufacturing, semiconductor/solid-state device testing/measurement, electric solid-state devices, etc., and can solve the problem of inability to accurately detect the size of the electric charge of the antenna structure.

Active Publication Date: 2013-02-27
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0015] The invention provides a plasma damage detection structure to solve the problem that the existing plasma damage detection structure cannot accurately detect the magnitude of the charge collected by the antenna structure

Method used

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  • Plasma induced damage (PID) detection structure and manufacture method thereof
  • Plasma induced damage (PID) detection structure and manufacture method thereof
  • Plasma induced damage (PID) detection structure and manufacture method thereof

Examples

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no. 1 example

[0039] Please refer to figure 2 , which is a schematic diagram of the plasma damage detection structure provided by the first embodiment of the present invention, such as figure 2 As shown, the plasma damage detection structure provided by the first embodiment of the present invention includes: a semiconductor substrate 100, a first layer, a second layer, a third layer and a top layer.

[0040] The first layer is disposed in the first dielectric layer, and the first layer includes the semiconductor device 210 and the protection diode 220 formed on the semiconductor substrate 100;

[0041] The second layer is disposed in the second dielectric layer, the second layer includes a first wire 310 and a second wire 320, the first wire 310 is electrically connected to the semiconductor device 210, and the second wire 320 electrically connected to the protection diode 220;

[0042] The third layer is disposed in the third dielectric layer, and the third layer includes an antenna st...

no. 2 example

[0064] Please refer to Figure 5 , which is a schematic diagram of the plasma damage detection structure provided by the second embodiment of the present invention. Different from the first embodiment of the present invention, the plasma damage detection structure provided by the second embodiment of the present invention further includes covering the third An intermediate dielectric layer of the dielectric layer and a plurality of intermediate layers disposed in the intermediate dielectric layer.

[0065]Specifically, each intermediate layer includes an intermediate layer pad 620, a first intermediate layer metal wire 630 and a second intermediate layer metal wire 640, and the intermediate layer pad 620 is connected to the bottom layer pad 420 and the top layer pad respectively. 520 is electrically connected, the first middle layer metal wire 630 is respectively electrically connected with the first bottom layer metal wire 430 and the top layer metal wire 510, and the second ...

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Abstract

The invention discloses a plasma induced damage (PID) detection structure and a manufacture method thereof. The PID structure comprises a semiconductor substrate, a first coverage, a second coverage, a third coverage and a top coverage, wherein the first coverage is arranged in a first medium layer and comprises a semiconductor device and a protection diode formed on the semiconductor substrate; the second coverage is arranged in a second medium layer and comprises a first wire and a second wire, wherein the first wire is electrically connected with the semiconductor device, and the second wire is electrically connected with the protection diode; the third coverage is arranged in a third medium layer and comprises an antenna structure and a bottom welding pad, wherein the antenna structure is electrically connected with the first wire, and the bottom welding pad is electrically connected with the second wire; the top coverage is arranged in a top medium layer and comprises a top metal line and a top welding pad, wherein the top metal line is electrically connected with the first wire and the second wire; and the top welding pad is electrically connected with the bottom welding pad. According to the PID detection structure and the manufacture method thereof, the strength of antenna effect can be accurately detected.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a plasma damage detection structure and a manufacturing method thereof. Background technique [0002] In the manufacturing process of semiconductor devices, plasma is used in many process steps such as dry etching, ion implantation and chemical vapor deposition. In theory, the plasma is electrically neutral to the outside, that is, positive ions and negative ions. number are equal. But in fact, the positive and negative ions entering the local area of ​​the wafer are not equal, which leads to the generation of a large number of free charges, making the conductors such as metal wires or polysilicon exposed to the plasma environment act like antennas. Collect these free charges. The longer these antennas are, the larger the area and the more charge they can collect. When the charges collected by these antennas reach a certain level, a discharge phenomenon will occ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/544H01L21/71H01L21/66
Inventor 马瑾怡郑雅文王晓韬许晓锋
Owner SEMICON MFG INT (SHANGHAI) CORP
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