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CMOS (Complementary Metal Oxide Semiconductor) image sensor pixel and control time sequence thereof

An image sensor and timing control technology, which is applied in image communication, radiation control devices, electric solid devices, etc., can solve the problem of low aperture ratio of metal windows, achieve the effect of improving light efficiency, aperture ratio, and image quality

Active Publication Date: 2011-08-17
BEIJING SUPERPIX MICRO TECHNOLOGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, multiple metal connections between pixels in adjacent rows and adjacent columns lead to low opening ratio of metal windows

Method used

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  • CMOS (Complementary Metal Oxide Semiconductor) image sensor pixel and control time sequence thereof
  • CMOS (Complementary Metal Oxide Semiconductor) image sensor pixel and control time sequence thereof
  • CMOS (Complementary Metal Oxide Semiconductor) image sensor pixel and control time sequence thereof

Examples

Experimental program
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specific Embodiment 1

[0048] like figure 1 As shown, the CMOS image sensor pixel adopts 4T2S structure, including four pixels, and the photodiodes of pixel 11, pixel 12, pixel 21 and pixel 22 are respectively PD11, PD12, PD21 and PD22; TX11 and TX12 are respectively pixel 11 and pixel 12 TX21 and TX22 are the charge transfer transistors of pixel 21 and pixel 22 respectively; SX1, SF1 and RX1 are the select transistors, source follower transistors and reset transistors of pixel 11 and pixel 21 respectively; SX2, SF2 and RX2 are respectively Select transistors, source follower transistors and reset transistors of pixels 12 and 22 . Pixel 11 and pixel 21 share transistors SX1, SF1, RX1 and active region FD1 (Floating Diffusion), pixel 12 and pixel 22 share transistors SX2, SF2, RX2 and active region FD2; shared pixel 11 and pixel 21 share Pixel 12 and pixel 22 form a back-to-back structure in the horizontal direction.

[0049] The metal interconnection lines used by CMOS image sensor pixels are expr...

specific Embodiment 2

[0051] like image 3 As shown, it is a schematic diagram of a 6X4 pixel array layout; image 3 The circuit schematic diagram corresponding to the schematic diagram of the pixel array layout is as follows: Figure 4 shown.

[0052] image 3 and Figure 4 In the pixel array shown, the FD area of ​​each pixel is connected to the gate of each corresponding source-following transistor with the first-layer metal connection, and the power supply Vdd line uses the first-layer metal connection; the SC1-SC6 lines are the first-layer metal connection, As a signal output line and a column controller timing control line. The second layer metal connection SX1 is connected to the gates of SX11~SX16, the second layer metal connection TX1 is connected to the gates of TX11~TX16, the second layer metal connection TX2 is connected to the gates of TX21~TX26; the second layer metal connection The line SX2 is connected to the gates of SX21-SX26, the second-layer metal connection TX3 is connecte...

specific Embodiment 3

[0053] The details of CMOS image sensor pixel array signal acquisition are expressed as follows:

[0054] like Figure 5 Shown is a schematic diagram of a pixel array with a row decoder and a column controller. The row decoder is placed on the left side of the pixel array (it can also be placed on the right side of the array), the column controller is placed on the top of the pixel array, and the signal readout device is placed at the bottom of the pixel array; the decoder, controller and The location of the signal readout device is not the only method of the present invention, and can also be adjusted according to the specific design and layout of the chip. Figure 5 In the schematic diagram shown, the specific positions of the array pixels are marked in detail, and the specific numbers of the timing output control lines of the decoder and the timing control lines of the column controller are also marked in detail. m and n are non-negative integers, representing the pixel r...

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Abstract

The invention discloses a CMOS (Complementary Metal Oxide Semiconductor) image sensor pixel and a control time sequence thereof. In a CMOS image sensor pixel array, four pixels are arranged into a 2X2 pixel array to serve as a group of pixel units, wherein two pixels in a first line and a second line respectively share a transistor, a source following transistor, a reset transistor and an active region in the lines; the first line and the second line are arranged in a back-to-back mode; multiple groups of pixel units are arranged vertically and horizontally to form a two-dimensional pixel array; in the pixel array, the pixels in the same row can be used for realizing the interconnection of devices by a second layer of metal cable; the pixels in the same line can be used for realizing the interconnection of the device by a first layer of metal cable; the first layer of metal cable is a signal output line, a line controller time sequence control line and a power supply control line; and the second layer of metal cable is a row decoder time sequence output control line. According to the pixel structure, the light consumption efficiency of a small-area pixel sensor can be improved so as to improve the sensitivity, and thus, the image quality of the small-area pixel image sensor can be effectively improved.

Description

technical field [0001] The invention relates to a CMOS image sensor, in particular to a CMOS image sensor pixel and its control timing. Background technique [0002] Image sensors are already widely used in digital cameras, mobile phones, medical devices, automobiles and other applications. In particular, the rapid development of CMOS (Complementary Metal Oxide Semiconductor) image sensors has made people have higher requirements for low power consumption, small size, and high resolution image sensors. [0003] The pixel structure arrangement of CMOS image sensors in the prior art takes 4T2S as an example. Due to the dependence on the structural characteristics of the pixel itself, the array generally needs the first layer of metal, the second layer of metal and the third layer of metal as the device interconnection. For wiring, multiple rows of first-layer metal or second-layer metal wiring are required between adjacent rows of pixels, and multiple columns of second-layer ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04N5/374H01L27/146H04N25/00
CPCH04N5/376H01L27/14603H01L27/14641H04N5/37457H04N25/778H04N25/779H04N25/766
Inventor 郭同辉旷章曲陈杰刘志碧
Owner BEIJING SUPERPIX MICRO TECHNOLOGY CO LTD
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