Bidirectional low-capacitance surge protection device

Abstract

The invention provides a bidirectional low-capacitance surge protection device, wherein the anode of a first PIN tube is connected with the cathode of a second PIN tube, and is used as a leading-out end S1; the anodes of a first TVS (Transient Voltage Suppressor) tube and a first GTO (Gate Turn Off Thyristor) tube, the cathode of a second GTO tube and the anode of the second PIN tube are respectively connected with the cathode of the first PIN tube; the cathode of the first TVS tube is connected with the cathodes of the second TVS tube and a third TVS tube; the gates of the first GTO tube and the second GTO tube are respectively connected with the anode of the third TVS tube; the cathode of the first GTO tube, the cathode of a fourth PIN tube, the anode of the second GTO tube and the anode of a third PIN tube are respectively connected with the anode of the second TVS tube; and the cathode of the third PIN tube is connected with the anode of a fourth PIN tube, and is used as a second leading-out end of the device. The invention has the advantages that the low-capacitance characteristic of the PIN tubes and the high-current discharging capability of the GTO tubes are utilized to realize the bidirectional low-capacitance surge protection device; breakover voltage control and lower operating range control of residual voltage are realized on the basis of the connected TVS tubes; and the breakover voltage and the residual voltage after breakover of the device can be effectively controlled by adjusting the breakdown voltage of the TVS tubes.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to the field of semiconductor overvoltage protection devices, and is a novel bidirectional low-capacity surge protection device. Background technique [0002] With the gradual adoption of new interface standards in the communication field, such as VDSL+, USB3.0, etc., the improvement of transmission speed will further put forward new requirements for the capacitance of protection devices. While ensuring high surge capacity, reducing device capacitance has become a common trend . [0003] In the past few decades, the microelectronics manufacturing process with silicon as the main processing material has changed from the initial few micron technology to the current 45nm, and the integration level of integrated circuit chips has become higher and higher, and the cost has become lower and lower. As the size of the chip shrinks, the overvoltage capability that the circuit can withst...

AI Technical Summary

Problems solved by technology

[0004] Although Thyristor, GDT, MOV, and transient voltage suppressor (Transient Voltage Suppressor, TVS) have been widely used in various protection fields as an effective surge / ESD protection device, they cannot etc. have complete advantages, so that the protection scheme often adopts a compromise method to design

This greatly reduces the protective effect

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