Umos transistor and method of forming the same

Abstract

The invention provides a forming method of a UMOS (U-groove-metal-oxide-silicon) transistor. The method has the following advantages: doped regions are formed in a doped well; the doped regions are arranged at the bottoms of body regions and source regions and stretch across the common boundaries of the body regions and the source regions; the doping type of the doped regions is opposite to that of the doped well, thus forming barriers on the common boundaries of the body regions and the doped regions; blocked by the formed barriers, the doped ions in the body regions can not enter into channel regions across the barriers, thus avoiding the impact on the start voltage of the transistor because the doped ions in the body regions enter into the channel regions. Correspondingly, the invention also provides the UMOS transistor formed by the method. The UMOS transistor and forming method thereof provided by the invention have the following beneficial effect: the performances of the UMOS transistor can be improved.

Description

technical field [0001] The invention relates to the semiconductor field, in particular to a UMOS transistor and a forming method thereof. Background technique [0002] With the continuous development of semiconductor technology, a power device (PowerDevice), as a new type of device, is widely used in fields such as disk drives and automotive electronics. Power devices need to be able to withstand large voltage, current and power loads. For example, the output rectifier is required to be able to input 20V voltage and output about 3.3V voltage and input 10V voltage and output about 1.5V voltage; and it is required to have a range of 10V to 50V failure voltage. However, existing MOS transistors and other devices cannot meet the above requirements. For example, the exhaustion voltage range of Schottky diodes is about 0.5V. Therefore, in order to meet the needs of applications, various power devices have become the focus of attention. [0003] U-groove metal-oxide-semiconductor...

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Problems solved by technology

[0013] In the above method, in order to reduce the contact resistance between the conductive plug and the doped well, a highly doped body region is formed at the bottom of the conductive plug, but the dopant ions in the body region will diffuse, and these dopant ions diffuse to The channel region affects the turn-on voltage of the UMOS transistor

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