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Technique method for restraining flash memory programming interference

A programming interference and process method technology, applied in the field of non-volatile memory, can solve the problems of programming speed and efficiency, and achieve the effect of simple process

Active Publication Date: 2012-08-29
SEMICON MFG INT (BEIJING) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method will also sharply reduce the electric field of the channel / drain PN junction of the memory cell selected for programming, thus adversely affecting the programming speed and efficiency.

Method used

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  • Technique method for restraining flash memory programming interference
  • Technique method for restraining flash memory programming interference
  • Technique method for restraining flash memory programming interference

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Embodiment Construction

[0024] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0025] In the following description, a lot of specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways different from those described here, and those skilled in the art can do it without departing from the meaning of the present invention. By analogy, the present invention is therefore not limited to the specific examples disclosed below.

[0026] Secondly, the present invention is described in detail in combination with schematic diagrams. When describing the embodiments of the present invention in detail, for the convenience of explanation, the cross-sectional view showing the device structure will not be partially enlarged according to the gener...

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Abstract

The invention provides a technique method for restraining flash memory programming interference, belonging to the technical field of nonvolatile memories in a super-large-scale integration circuit manufacturing technology. In the method, one-step inclination donor impurity ion injection is added to the standard flash memory process so as to decrease the PN junction impurity gradient of a substrate / drain terminal, thereby decreasing the electric field in a PN junction between the substrate and the drain terminal, and decreasing the programming interference. Meanwhile, the impurity gradient of the PN junction at a channel / drain terminal can be maintained so as to maintain the PN junction electric field at the needed channel / drain terminal, and ensure the programming efficiency and speed. The technique method can be used for effectively reducing the programming interference under the condition of not increasing the number of photolithography masks, thus having important meaning in improving the reliability of a flash memory.

Description

technical field [0001] The invention belongs to the technical field of nonvolatile memory in VLSI manufacturing technology, and in particular relates to a process method capable of suppressing programming interference of flash memory. Background technique [0002] Non-volatile memory represented by flash memory is widely used in various products, such as mobile phones, notebooks, handheld computers and solid-state hard disks, because of its data retention ability in case of power failure and its advantages of rewritable data multiple times. communication equipment. Among them, NOR flash memory is widely used in code storage chips of mobile terminals such as mobile phones because of its fast random read speed. However, ordinary NOR flash memory is usually an n-channel memory cell, which is programmed by channel hot electron injection. This programming method requires a higher bit line voltage (usually 4-5V). At the same time, in order for the channel electrons to gain enoug...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/8247H01L21/265H10B69/00H10B99/00
CPCH01L29/7881H01L21/26586H01L29/66825H01L27/11521H10B41/30
Inventor 蔡一茂黄如
Owner SEMICON MFG INT (BEIJING) CORP