Imaging-based silicon-on-insulator-electro-static discharge (SOI-ESD) protective device and manufacturing method thereof

Abstract

The invention discloses an imaging-based silicon-on-insulator-electro-static discharge (SOI-ESD) protective device and a manufacturing method thereof. The ESD device comprises a bottom substrate, an insulation buried layer positioned on the bottom substrate, an active area positioned on the insulation buried layer, and a conduction bolt passing through the insulation buried layer and connected with the active area and the bottom substrate, wherein the active area comprises a well region P and a well region N; a transverse positive and negative (PN) junction is formed between the well region P and the well region N; the conduction bolt is positioned below the PN junction; a field oxygen area is formed above the PN junction; a cathode contact end is arranged above the well region P; and an anode contact end is arranged above the well region N. A window is formed on a buried oxygen layer of the device; the window can release heat generated by an ESD large current well, and can improve the ESD resistance of the device well. The ESD resistant voltage in a human body model (HBM) can be more than 2kV, and the industrial standards of current HBM are achieved.

Description

technical field [0001] The invention relates to a semiconductor device, in particular to a pattern-based silicon-on-insulator (SOI) ESD protection device and a manufacturing method thereof, belonging to the technical field of semiconductor manufacturing. Background technique [0002] Silicon-on-insulator (SOI) is the silicon integrated circuit technology of the twenty-first century. The SOI material market expands about 40% every year, and it is expected that by 2010, its size will exceed 1 billion US dollars, far higher than the annual growth rate of 7.7% for silicon materials. The large-scale commercial use of SOI began in the late 1990s. In 1998, IBM used SOI technology to achieve breakthroughs in high-speed, low-power, high-reliability mainstream microelectronic products. IBM carried out large-scale production of SOI logic devices in 1999, and reached the yield of bulk silicon devices. In 2002, IBM launched the new 5AS / 400 server series with SOI technology, which is a...

AI Technical Summary

Problems solved by technology

However, most domestic semiconductor process lines still use bulk silicon ESD protection technology. The root cause is the lack of SOI ESD protection solutions with independent intellectual property rights.

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