Light emitting diode structure and manufacturing method thereof
A technology of light-emitting diodes and light-emitting layers, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of large stress, lattice mismatch, and the decline of the luminous efficacy and reliability of light-emitting diode components.
Inactive Publication Date: 2013-03-27
佛山市奇明光电有限公司 +1
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Problems solved by technology
[0003] However, due to the large lattice mismatch between aluminum oxide and gallium nitride series materials, considerable stress is generated when the growth substrate is removed by laser lift-off
Also, light-emitting epitaxial structures are more likely to absorb the energy of the laser
As a result, the light-emitting epitaxial structure will be damaged, resulting in a significant drop in the luminous efficacy and reliability of the light-emitting diode element, as well as the pass rate of the manufacturing process.
Method used
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[0035] Please refer to Figure 1A to Figure 1F , which is a cross-sectional view of a manufacturing process of a light emitting diode structure according to an embodiment of the present invention. When fabricating the light emitting diode structure, an epitaxial growth substrate 100 is provided first. The epitaxial growth substrate 100 has opposing surfaces 102 and 104 . The material of the epitaxial growth substrate 100 can be, for example, aluminum oxide. In one embodiment, the epitaxial growth substrate 100 may be a sapphire substrate composed of alumina. Next, the n-type semiconductor layer 106 , the light-emitting layer 108 and the p-type semiconductor layer 110 are sequentially covered on the surface 102 of the epitaxial growth substrate 100 by using, for example, an epitaxial growth method. In an embodiment, the materials of the n-type semiconductor layer 106 , the light emitting layer 108 and the p-type semiconductor layer 110 may be, for example, GaN-based materials...
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The invention discloses a light emitting diode structure and a manufacturing method thereof. The light emitting diode structure comprises a p type electrode, a jointing substrate, a p type semiconductor layer, a luminous layer, an n type semiconductor layer, an epitaxial growing substrate and an n type electrode, wherein the jointing substrate is arranged on the p type electrode, the p type semiconductor layer is arranged on the jointing substrate, the luminous layer is arranged on the p type semiconductor layer, the n type semiconductor layer is arranged on the luminous layer, the epitaxial growing substrate is arranged on the n type semiconductor layer, and includes an opening which penetrates through the epitaxial growing substrate, and the n type electrode is arranged in the opening, and is electrically connected with the n type semiconductor layer.
Description
technical field [0001] The present invention relates to a light-emitting element, and in particular to a light-emitting diode (LED) structure and a manufacturing method thereof. Background technique [0002] At present, when making GaN-based light-emitting diodes with a vertical structure, the laser lift-off (Laser Lift-off) technology is usually used after the light-emitting epitaxial structure is grown on the epitaxial growth substrate (Epitaxial Growth Substrate). Remove this growth substrate. The growth substrate is currently generally made of alumina (Al 2 o 3 ) composed of sapphire substrates. [0003] However, due to the large lattice mismatch between aluminum oxide and gallium nitride series materials, considerable stress is generated when the growth substrate is removed by laser lift-off. Also, the light-emitting epitaxial structure is more likely to absorb the energy of the laser light. As a result, the light-emitting epitaxial structure will be damaged, resul...
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IPC IPC(8): H01L33/20
Inventor 余国辉卢宗宏朱长信
Owner 佛山市奇明光电有限公司