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Shoulder-lifting edulcoration method in monocrystal production process

A production process, single crystal technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of affecting the yield of single crystal, low production efficiency, etc., to reduce the number of lifting shoulders, improve production efficiency, improve The effect of single crystal yield

Inactive Publication Date: 2011-10-12
ZHEJIANG XINGYU ENERGY TECH
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  • Abstract
  • Description
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AI Technical Summary

Problems solved by technology

The traditional process is to lift the shoulders directly after the shoulders are magnified, and it is often necessary to lift 4 to 5 shoulders, or even more, to remove impurities in the melt. In this way, not only the production efficiency is low, but also the Affects single crystal yield

Method used

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Embodiment Construction

[0006] The present invention will be further described below in conjunction with specific examples.

[0007] After hoisting one or two shoulders during the single crystal straight pull process, keep the power value of the single crystal furnace at the shoulder power, and then enlarge the shoulders that have been removed, and automatically equalize to 4-9 cm in diameter; then exit the automatic Isometric state, change to manual state, increase the power value to 60-90 kilowatts, set the crystal rotor at 1-3 rpm, and the crucible at 1-3 rpm, and put the equal-diameter 4-9 cm long The polycrystalline is melted back, and after 50-70% of the crystal is melted, the power value is reduced to 40-60 kilowatts, so that the crystal is slowly melted into a "peach shape" and can be lifted.

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Abstract

The invention relates to a shoulder-lifting edulcoration method in a monocrystal production process, and the method comprises the following steps: after one or two shoulders are lifted in the monocrystal production process, keeping the power value of a monocrystal furnace at shouldering power; amplifying the shoulder of which the edge is removed; automatically equalizing the diameter of 4-9cm; then, exiting an automatic isodiametric state, and changing into a manual state; increasing the power value to 60-90 kilowatts; keeping crystal rotation at 1-3 revolutions per minute and crucible rotation at 1-3 revolutions per minute; carrying out back melting on isodiametric polycrystal of which the length is 4-9 cm; after melting 50-70% of crystal, lowering the power value to 40-60 kilowatts; and slowly melting the crystal into a 'peach shape'. According to the shoulder-lifting edulcoration method, the crystal is melted from top to bottom so as to be slowly melted into a 'peach shape' which is easy to adsorb a great quantity of impurities, thereby playing a role in purifying a silicon fusant. According to the shoulder-lifting edulcoration method, shoulder lifting times are reduced, and the purposes of improving the monocrystal finished product rate and improving the production efficiency are achieved.

Description

technical field [0001] The invention relates to a method for removing impurities of hanging shoulders in the single crystal production process. Background technique [0002] In the single crystal production process, the purity of the raw materials will lead to frequent shoulder removal during the single crystal pulling process. The traditional process is to lift the shoulders after the shoulders are enlarged and lifted directly. It is often necessary to lift 4 to 5 shoulders, or even more to remove impurities in the melt. In this way, not only the production efficiency is low, but also the Affects single crystal yield. Contents of the invention [0003] The object of the present invention is to provide a method for removing impurities in a hanging shoulder in the single crystal production process which can not only improve the single crystal yield, but also improve the production efficiency. [0004] The technical solution adopted by the present invention is: a method fo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/00C30B29/06
Inventor 江土军
Owner ZHEJIANG XINGYU ENERGY TECH
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