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Plasma oxidation method and plasma oxidation apparatus

A technology of plasma and equipment, which is applied in the field of plasma oxidation equipment, can solve problems such as difficulty in obtaining thick films and the effect of applying bias voltage, and achieve the effects of improving reactivity, improving oxidation rate, and improving oxidation rate

Inactive Publication Date: 2011-10-19
FUJIFILM CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, when forming a thick oxide film, it is difficult to obtain the effect of applying a bias voltage, so it is difficult to obtain a thick film

Method used

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  • Plasma oxidation method and plasma oxidation apparatus
  • Plasma oxidation method and plasma oxidation apparatus
  • Plasma oxidation method and plasma oxidation apparatus

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Embodiment Construction

[0047] figure 1 is a sectional view showing the composition of a plasma oxidation apparatus related to an embodiment of the present invention.

[0048] Such as figure 1 As shown, the plasma oxidation apparatus 10 includes a vacuum chamber 12 (vacuum bottle); a process gas introduction portion 14 is provided at an upper portion of the vacuum chamber 12 and a process gas for generating plasma is introduced through the introduction portion 14 . Although not shown in the drawings, a mass flow controller (MFC) may be provided for the process gas introduction portion 14 so that the process gas is supplied to the inside of the vacuum chamber 12 while controlling the flow volume of the process gas.

[0049] In addition, the exhaust section 11 includes an exhaust pump (not shown) and a pressure regulating mechanism (not shown), which are connected to the vacuum chamber 12, and the gas flow rate used in the plasma oxidation treatment can be adjusted by these two mechanisms. volume and...

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Abstract

The invention relates to a plasma oxidation method and a plasma oxidation apparatus. The plasma oxidation method includes the steps of: generating oxygen-containing plasma with a process gas containing oxygen; applying a bias voltage to a substrate placed on a stage; and radiating positive ions and negative ions in the oxygen-containing plasma onto the substrate so as to perform plasma oxidation of the substrate while controlling a bias potential of the substrate in such a manner that a maximum value Vmax and a minimum value Vmin of the bias potential and a plasma potential Vp satisfy a following relationship: Vmin<Vp<Vmax.

Description

technical field [0001] The present invention relates to a plasma oxidation method and plasma oxidation equipment, and more particularly to a plasma oxidation method and plasma for oxidizing silicon to form a silicon oxide film by emitting oxygen plasma onto a silicon substrate, which are used in semiconductor processing Oxidation equipment. Background technique [0002] In the manufacturing process of a semiconductor device, for example, a step of forming a silicon oxide film on the surface of a silicon substrate by oxidizing the silicon substrate is an important step. As a method of oxidizing silicon, a thermal oxidation method is generally used, but this method is accompanied by a high processing temperature of 1000° C., and there is a possibility of diffusing impurities in the silicon substrate. Therefore, a silicon oxidation method using plasma oxidation has been proposed. [0003] For example, Japanese Patent Application Laid-Open No. 11-121448 discloses a method of m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/316
CPCH01L21/02164H01L21/02238
Inventor 高桥秀治进藤春雄
Owner FUJIFILM CORP
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