Self aligned fin-type programmable memory cell

Abstract

A fin-type programmable memory cell includes a bottom electrode electrically coupled to an access device, a top electrode, and an L-shaped memory material element electrically coupled to the bottom and top electrodes. A memory array includes an array of such memory cells, electrically coupled to an array of access devices. Method for making a memory cell, includes: forming a dielectric support layer over a bottom electrode, the dielectric support layer having an upper surface; forming a cavity through the dielectric support layer, exposing a surface of the bottom electrode and defining a dielectric support structure having a sidewall; forming a film of memory material over the dielectric support structure and in the cavity; depositing a dielectric spacer layer over the memory material film; forming a dielectric sidewall spacer from the dielectric spacer layer and a memory material structure having a generally horizontal portion underlying the dielectric sidewall spacer and a generally vertical portion between the dielectric sidewall spacer and the sidewall of the dielectric support structure; forming a dielectric fill; planarizing the dielectric fill to expose upper ends of the vertical portion of the memory material structure; depositing a top electrode material over the planarized dielectric fill; and forming a top electrode from the top electrode material and a memory material element from the memory material structure.

Description

Technical field [0001] The present invention relates to high-density memory devices based on phase change memory materials, such as chalcogenide materials and other programmable resistance memory materials, and methods for manufacturing such devices. Background technique [0002] Phase change-based storage materials, such as chalcogenide or other similar materials, can cause a phase change between an amorphous state and a crystalline state by applying a current class suitable for use in integrated circuits. The substantially amorphous state has a higher resistivity than the crystalline state, which can be easily sensed and used as an indicator of data. These characteristics have aroused interest in using programmable resistive materials as nonvolatile memory circuits, which can be read or written with random access. [0003] The phase change from the amorphous state to the crystalline state is usually a lower current operation. The phase change from the crystalline state to the j...

AI Technical Summary

Problems solved by technology

The difficulty with this process is that the phase change material needs to be injected into very narrow gaps

In addition, the finished fin phase change material has only a limited height, which limits the energy saving performance of this memory cell

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