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A kind of diffusion method for preparing polycrystalline silicon solar cell emitter

A technology of solar cells and diffusion methods, which is applied in the field of diffusion for preparing high-efficiency emitters of polycrystalline silicon solar cells, can solve the problems of high doping concentration and uneven distribution of phosphorus impurities, achieve uniform distribution of impurities, low concentration of impurities on the surface, and reduce efficiency loss effect

Inactive Publication Date: 2011-12-14
JIANGYIN XINHUI SOLAR ENERGY
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AI Technical Summary

Benefits of technology

This technology helps improve the performance of solar cell devices that use crystalline silicon wafers for their substrates. By mixing these gases together at high temperatures or pressure, they create an oxidized layer over the entire area where it's used during manufacturing processes. These layers help prevent defects from happening inside the device while also controlling its properties such as conductivity. Overall this method allows for better quality products without increasing processing steps compared to traditional methods like two pass sources diffusion.

Problems solved by technology

This patented technical problem addressed in this patents relates to improving the manufacturing processes for producing small area photovoltaic devices without compromising their effectiveness due to variations caused during these methods.

Method used

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  • A kind of diffusion method for preparing polycrystalline silicon solar cell emitter
  • A kind of diffusion method for preparing polycrystalline silicon solar cell emitter

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Embodiment

[0017] Raise the temperature to 850°C, pass in a mixed gas of nitrogen and oxygen to oxidize the surface of the silicon wafer, control the flow rate of nitrogen gas to 26L / min, the flow rate of oxygen to 2.6L / min, and the oxidation time to 10min; keep the temperature at 850 °C, using liquid POCl 3 Phosphorus source, control the flow rate of large nitrogen gas to 20L / min, the flow rate of oxygen to 2L / min, the flow rate of small nitrogen gas to 1.5L / min, and the diffusion time to 10min for the first diffusion; keep the temperature at 850°C and use liquid POCl 3 Phosphorus source, control the flow rate of large nitrogen gas to 20L / min, the flow rate of oxygen to 2L / min, the flow rate of small nitrogen gas to 1.5L / min, and the diffusion time to 10min, and perform the second diffusion; keep the temperature at 850°C, use Liquid POCl 3 Phosphorus source, control the flow rate of large nitrogen gas to 20L / min, the flow rate of oxygen to 2L / min, the flow rate of small nitrogen gas t...

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Abstract

The invention discloses a diffusion method for preparing a polycrystalline silicon solar cell emitter, which belongs to the technical field of solar cells. The present invention uses a liquid POCl3 phosphorus source to carry out three times of source diffusion with the same conditions: using a liquid POCl3 phosphorus source, the temperature is 760-880°C, the flow rate of large nitrogen gas is 18-28L/min, and the flow rate of oxygen is 0.4-3.4L/min , the small nitrogen gas flow rate is 0.3-2.3L/min, the diffusion time is 1-20min, and the first diffusion is carried out; after the diffusion, a large nitrogen and oxygen mixed gas is introduced to carry out constant temperature pushing. The PN junction formed by this diffusion method has low concentration of impurities on the surface and uniform distribution of impurities, which is beneficial to the collection of electrons, reduces the efficiency loss of solar cells due to recombination, and improves the conversion efficiency by 0.11. conditions without increasing the complexity of the process.

Description

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Claims

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Application Information

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Owner JIANGYIN XINHUI SOLAR ENERGY
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