Memory transistor with non-planar floating gate and method of manufacturing the same

Abstract

A flash memory device comprising: a wafer; a gate oxide layer (140) disposed on the wafer; a floating gate configured on the gate oxide layer, the wafer, or a combination thereof the floating gate comprises a planar floating gate portion (200) and a generally rectangular floating gate portion (210), the generally rectangular floating gate portion being disposed over the flat floating gate portion through on selected regions; a high-K dielectric material (120) disposed on said floating gate; and a control gate (110) disposed on said high-K dielectric material; wherein said high-K dielectric Electrical material forms a zigzag pattern coupling the floating gate to the control gate.

Description

technical field [0001] The present disclosure relates to semiconductor devices, and more particularly, to flash memory devices and methods of manufacturing the same. Background technique [0002] Memory devices are typically provided generally as internal storage areas within computers. The term memory means data storage, which may be in the form of an integrated circuit chip. There are many different types of memory used in many modern electronic products, the most common of which is RAM (Random Access Memory). RAM is often used as the main memory of a computer environment. RAM can be used as read and write memory, in other words, data can be written into RAM and data can be read from RAM. In contrast, read-only memory (ROM) can only read data. Most RAM is volatile, meaning it requires uninterrupted power to maintain its contents. Any data in RAM is lost once the power is turned off. [0003] Computers almost always contain a small amount of ROM to hold instructions f...

AI Technical Summary

Problems solved by technology

Excessive scaling of the gate dielectric thickness can cause large current leakage from the floating gate

This will reduce the memory lifetime of the device

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