A memory management method and device

A memory management and memory technology, applied in the storage field, can solve the problems of increased programming time, increased programming voltage, slow speed of non-volatile storage devices, etc., and achieves the effect of improved reliability
CN102298543AInactive Publication Date: 2011-12-28HUAWEI TECH CO LTD
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Patent Information

Authority / Receiving Office
CN Β· China
Current Assignee / Owner
HUAWEI TECH CO LTD
Publication Date
2011-12-28
Estimated Expiration
Not applicable Β· inactive patent

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Abstract

The embodiment of the present invention discloses a memory management method and device, wherein the implementation of the method includes: monitoring whether the condition for screening bad pages is met; if the condition for performing bad page screening is met, at least one block of the non-volatile memory The bad page is obtained by screening the data pages in the bad page; the bad page is a page whose stability does not meet the predetermined standard; the data in the bad page is read, and the data in the bad page read is written to an unused In the invalid page; after confirming that the data in the read bad page is successfully written, set the bad page as a disabled page. The solution for managing the pages of the nonvolatile memory in the embodiment of the present invention is universal, and improves the reliability of the nonvolatile memory on the premise of ensuring the speed of the nonvolatile memory.
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Description

technical field

[0001] The present invention relates to the technical field of storage, in particular to a memory management method and device. Background technique

[0002] A non-volatile memory such as a solid state disk (Solid State Disk, SSD) is generally implemented by using a NAND flash memory (NAND Flash). NAND Flash is a non-volatile random access storage medium. Its characteristic is that the data does not disappear after power failure, so it can be used as an external memory. NAND Flash is divided into two types: Single-Level Cell (SLC) and Multi-Level Cell (MLC). The difference between SLC and MLC is mainly the structure. Each storage unit of the SLC chip only stores 1Bit (byte) of data. The SLC type SSD has high efficiency, fast speed, high reliability, long life and power saving. The MLC chip uses a large number of voltage levels to store 2Bit or more Bit data in each storage unit. The data density is relatively high, and the MLC type SSD is cheap. The speci...

Claims

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