Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

A memory management method and device

A memory management and memory technology, applied in the storage field, can solve the problems of increased programming time, increased programming voltage, slow speed of non-volatile storage devices, etc., and achieves the effect of improved reliability

Inactive Publication Date: 2011-12-28
HUAWEI TECH CO LTD
View PDF1 Cites 21 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this solution can greatly increase the life of non-volatile storage devices (such as SSD), the programming time is also greatly increased, resulting in slow speed of non-volatile storage devices such as SSD.
In addition, due to the need to reduce the programming voltage and increase the programming time, and the SSD hardware characteristics provided by each supplier are not the same, this solution is proposed by the supplier for each SSD and is not universal.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A memory management method and device
  • A memory management method and device
  • A memory management method and device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0025] Embodiments of the present invention are mainly applied to non-volatile storage devices such as SSDs, and SSDs are used as an example for introduction in embodiments of the present invention.

[0026] An embodiment of the present invention provides a memory management method, such as figure 1 shown, including:

[0027] 101: Monitor whethe...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The embodiment of the present invention discloses a memory management method and device, wherein the implementation of the method includes: monitoring whether the condition for screening bad pages is met; if the condition for performing bad page screening is met, at least one block of the non-volatile memory The bad page is obtained by screening the data pages in the bad page; the bad page is a page whose stability does not meet the predetermined standard; the data in the bad page is read, and the data in the bad page read is written to an unused In the invalid page; after confirming that the data in the read bad page is successfully written, set the bad page as a disabled page. The solution for managing the pages of the nonvolatile memory in the embodiment of the present invention is universal, and improves the reliability of the nonvolatile memory on the premise of ensuring the speed of the nonvolatile memory.

Description

technical field [0001] The present invention relates to the technical field of storage, in particular to a memory management method and device. Background technique [0002] A non-volatile memory such as a solid state disk (Solid State Disk, SSD) is generally implemented by using a NAND flash memory (NAND Flash). NAND Flash is a non-volatile random access storage medium. Its characteristic is that the data does not disappear after power failure, so it can be used as an external memory. NAND Flash is divided into two types: Single-Level Cell (SLC) and Multi-Level Cell (MLC). The difference between SLC and MLC is mainly the structure. Each storage unit of the SLC chip only stores 1Bit (byte) of data. The SLC type SSD has high efficiency, fast speed, high reliability, long life and power saving. The MLC chip uses a large number of voltage levels to store 2Bit or more Bit data in each storage unit. The data density is relatively high, and the MLC type SSD is cheap. The speci...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G06F11/00G06F11/10
Inventor 周建华
Owner HUAWEI TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com