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Adaptive Novel Memory Matching Data Strobe Method

A technology of matching data and strobe pulses, applied in static memory, instruments, etc., can solve problems such as system memory overflow and crash, and achieve the effect of stabilizing system operation

Inactive Publication Date: 2011-12-28
SICHUAN CHANGHONG ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to overcome the disadvantage that the same system is prone to memory overflow and collapse when applying new types of memory and / or new types of memory from different manufacturers in different temperature environments, and to provide an adaptive new type of memory matching data strobe pulse method

Method used

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Examples

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Effect test

Embodiment

[0017] In this example, two DDR SDRAMs are taken as an example, which are respectively named the first DDR SDRAM and the second DDR SDRAM, wherein the first DDR SDRAM and the second DDR SDRAM are DDR2 SDRAM and / or DDR3 SDRAM.

[0018] Firstly, the system hardware is initialized, and then when the system initializes DDR SDRAM, it detects the high and low DQS / DQ phase points of the first DDR SDRAM and the second DDR SDRAM respectively and counts the high and low DQS / DQ of the first DDR SDRAM and the second DDR SDRAM Phase valid points, here the high DQS / DQ phase point detection of the first DDR SDRAM is valid as "0024~0074", the low DQS / DQ phase point detection of the first DDR SDRAM is valid as "0043~0047", the second The high-order DQS / DQ phase point detection of DDR SDRAM is valid for "0014~0084", and the low-order DQS / DQ phase point detection of the second DDR SDRAM is valid for "0041-0047" as an example, and then according to the statistics of each DDR SDRAM The high and lo...

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PUM

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Abstract

The present invention relates to data storage technology. The present invention solves the problem that the existing same system is easy to cause memory overflow and collapse when using new memory and / or new memory from different manufacturers in different temperature environments, and provides a self-adaptive new memory matching data strobe pulse The method, and its technical solution can be summarized as: detecting the high-order and low-order DQS / DQ phase points of each DDR SDRAM at each initialization to obtain an effective point, and then selecting the intermediate value to preset as an environmental parameter. The invention has the beneficial effects of stable operation and is suitable for systems using DDR2 SDRAM and / or DDR3 SDRAM.

Description

technical field [0001] The invention relates to data storage technology, in particular to DDR SDRAM (Double Data Rate SDRAM, synchronous dynamic random access memory) technology. Background technique [0002] At present, DDR2 SDRAM (four times data rate synchronous dynamic random access memory) and / or DDR3 SDRAM (eight times data rate synchronous dynamic random access memory) is becoming more and more popular in electronic equipment such as PDP TV and LCD TV. The clock frequency of DDR2 is 400MHz ~1066MHz, the clock frequency of DDR3 is even higher. Now DDR SDRAM technology has been developed to DDR3 SDRAM, the theoretical speed can support up to 1600MT / s, DDR SDRAM can double the speed of SDRAM without increasing the clock frequency in essence, it allows reading data on the rising and falling edges of the clock , so its speed is twice that of standard SDRAM. As for the address and control signal, it is the same as traditional SDRAM, and data judgment is still performed on ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C29/52
Inventor 史青
Owner SICHUAN CHANGHONG ELECTRIC CO LTD
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