Surface treatment method of InGaN-based photo-electrode
A surface treatment and photoelectrode technology, applied in the direction of electrodes, anodic oxidation, electrolysis process, etc., can solve the problems of less light absorption, low IPCE, unsatisfactory results, etc., and achieve simple equipment, improved quantum conversion efficiency, and easy large-scale use Effect
Inactive Publication Date: 2013-07-31
NANJING UNIV
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Problems solved by technology
However, due to the In of this photoelectrode 0.20 Ga 0.80 The N film is only 60nm thick and absorbs less light, and the IPCE at this time is still very low
Therefore, the applicant puts In x Ga 1-x The thickness of the N film is increased to 250nm to absorb more sunlight, but the result is not ideal, IPCE is only 15%
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[0019] Obtain In with a thickness of 250nm by MOCVD method 0.20 Ga 0.80 N film. Soak in acetone for 10 min, rinse with acetone for 1 min, and then rinse the electrode with deionized water for 1 min to use it as the photoelectrode of the photoelectrochemical cell.
[0020] With 1M HCl aqueous solution as the electrolyte, In 0.20 Ga 0.80 The N photoelectrode was used as the anode, the platinum Pt was used as the cathode, and the Ag / AgCl electrode was used as the reference electrode. The CHI600B electrochemical analyzer was used to scan 2 circles from 0V to 5V by cyclic voltammetry under the condition of no light. The scanning speed is: 30mV / s. The above is In 0.20 Ga 0.80 Specific methods for electrochemical surface treatment of N photoelectrodes. After the above steps, In 0.20 Ga 0.80 N photoelectrode. from In 0.20 Ga 0.80 Cyclic voltammetry curves of N electrochemical surface treatment ( figure 1 ) It can be seen that an oxidation peak will appear at 2.5V in the f...
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Abstract
The invention relates to a surface treatment method of an InGaN-based photo-electrode, which can greatly improve the IPCE (Incident Photon-to-electron Conversion Efficiency) of the indium gallium nitrogen-based photo-electrode. The surface treatment method comprises the following steps: taking an InxGa1-xN photo-electrode as an anode, soaking the InxGa1-xN photo-electrode into a 0.1-5 M HCI aqueous solution and scanning at least one circulation from 0V to 5V by adopting the cyclic voltammetry under the situation of no illumination, wherein x is more than 0 and is less than 1. Preferably, the thickness of InxGa1-xN on the surface of the InxGa1-xN photo-electrode is less than 250 nm, and more preferably, the thickness is 250-1500 nm. The invention has the advantages that the surface treatment method is simple and efficient; the equipment is simple and is easy for large-scale use; and the quantum conversion efficiency of the photo-electrode is greatly improved after surface treatment.
Description
technical field [0001] The invention relates to a surface treatment method of an indium gallium nitrogen-based photoelectrode. Background technique [0002] The energy crisis is one of the great challenges facing mankind now and in the future. At present, fossil energy is the main energy source for human survival, but the reserves of fossil energy are limited, and with the increase of its consumption, the price is also rising. In addition, the extensive use of fossil energy will emit CO 2 , sulfide and other pollutants, damaging the environment and endangering human health. Replacing fossil energy with renewable energy is an effective way to solve energy and environmental crises. Hydrogen energy is considered as an ideal energy source, which has the advantages of no pollution, light weight, and high calorific value. Exploring efficient, low-cost, and large-volume hydrogen production methods is a hot spot of concern in various countries. Hydrogen production methods mainl...
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IPC IPC(8): C25D11/02C25B11/04
Inventor 邹志刚罗文俊李朝升李明雪刘斌陈敦军于涛谢自力张荣
Owner NANJING UNIV