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Methods for sputtering a resistive transparent thin film for use in cadmium telluride based photovoltaic devices

A sputtering and thin film layer technology, applied in the deposition field of resistive transparent buffer thin film layer, can solve the problems of reducing the open circuit voltage of the device and reducing the filling factor of the device, etc.

Active Publication Date: 2012-01-11
PRIMESTAR
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These defects reduce the open circuit voltage of the device (V OC ) and reduce the fill factor of the device (fill factor)

Method used

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  • Methods for sputtering a resistive transparent thin film for use in cadmium telluride based photovoltaic devices
  • Methods for sputtering a resistive transparent thin film for use in cadmium telluride based photovoltaic devices
  • Methods for sputtering a resistive transparent thin film for use in cadmium telluride based photovoltaic devices

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Embodiment Construction

[0016] Reference will now be made in detail to the embodiments of the present invention, one or more examples of which are illustrated in the accompanying drawings. Each example is provided as an explanation of the present invention, not a limitation of the present invention. In fact, it will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the scope and spirit of the inventions. For example, features described or illustrated as part of one embodiment can be used with another embodiment to yield a still further embodiment. Accordingly, the present invention is intended to cover such modifications and changes as come within the scope of the appended claims and their equivalents.

[0017] In this disclosure, when layers are described as being "on" or "over" another layer or substrate, it will be understood that the layers can be in direct contact with each other or have another layer or...

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Abstract

Methods for depositing a resistive transparent buffer thin film layer on a substrate are provided. The methods can include cold sputtering a resistive transparent buffer layer on a substrate (e.g., at a sputtering temperature of about 10 DEG C. to about 100 DEG C.) in a sputtering atmosphere comprising about 0.01% to about 5% by volume water vapor (e.g., about 0.05% to about 1% by volume water vapor). The resistive transparent buffer layer can then be annealed at an anneal temperature of about 450 DEG C. to about 700 DEG C. The methods of depositing a resistive transparent buffer thin film layer on a substrate can be used in a method of manufacturing a cadmium thin film photovoltaic device by forming cadmium sulfide layer on the resistive transparent buffer layer, and forming a cadmium telluride layer on the cadmium sulfide layer.

Description

technical field [0001] The subject matter disclosed herein relates generally to methods of depositing resistive transparent buffer film layers. More particularly, the subject matter disclosed herein relates to methods of depositing resistive transparent buffer thin film layers for use in cadmium telluride thin film photovoltaic devices. Background technique [0002] Thin-film photovoltaic (PV) modules (also referred to as "solar panels") based on cadmium telluride (CdTe) paired with cadmium sulfide (CdS) as photoreactive components are gaining widespread acceptance and attention in the industry. CdTe is a semiconductor material with properties particularly suitable for converting solar energy into electrical energy. For example, CdTe has an energy bandgap of about 1.45eV, which enables it to convert more from the solar spectrum than lower bandgap semiconductor materials previously used in solar cell applications (eg, about 1.1eV for silicon) energy. Furthermore, CdTe conv...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/06C23C14/34C30B29/48C30B23/00H01L31/0296H01L31/18
CPCY02E10/543H01L31/03925H01L31/1884H01L31/1836C23C14/086H01L31/073Y02P70/50
Inventor P·L·奥基夫
Owner PRIMESTAR