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Sputtering method

A sputtering and substrate technology, applied in the field of sputtering, can solve the problems of weak magnetic field strength and film sagging, and achieve the effects of preventing film sagging, uniform film thickness distribution, and increasing plasma density

Active Publication Date: 2015-07-15
ULVAC INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] In magnetron sputtering using an AC power supply, the strength of the magnetic field at both ends of the magnetic circuit in the direction perpendicular to the direction in which the electric field is formed becomes weaker. The difference is that the film layer sagging also occurs on the other two ends, and as a result, the film layer sagging defect occurs on the entire outer periphery of the substrate to be processed.

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Embodiment approach 1

[0050] In this embodiment, the figure 1 The method of correcting the AC power ratio described in . The sputtering conditions were as follows: the sputtering chamber was evacuated to a pressure of 0.3 Pa, seven Al target pairs were arranged in parallel, and an AC power supply was connected to each target pair.

[0051] The supply power of the AC power supply connected to the target pairs at both ends of the parallel arrangement direction is 80kW, and the supply power of the five AC power supplies clamped by the two ends of the AC power supply is 75kW. In the comparative example, under the same conditions as described above, Without correcting the electric power ratio, the supplied electric power of all AC power sources was set to 75 kW.

[0052] image 3 A graph showing the results of this embodiment is shown in . On the horizontal axis, the distance on the substrate to be processed in the same direction as the direction in which the target pairs are arranged side by side i...

Embodiment approach 2

[0058] In this embodiment, the figure 2 The method of adding an auxiliary magnet to increase the strength of the magnetic field described in . The sputtering conditions were the same as those in Embodiment 1. The sputtering chamber was evacuated to a pressure of 0.3 Pa, and the seven Al target pairs were respectively connected to AC power sources. Auxiliary magnets are respectively provided at both end portions in a direction perpendicular to the parallel arrangement direction of the magnetic circuits. In the comparative example, no auxiliary magnet was additionally provided.

[0059] Figure 4 A graph showing the results of this embodiment is shown. The horizontal axis represents the film thickness On the vertical axis, the distance on the substrate to be processed in the direction perpendicular to the direction in which the target pairs are arranged in parallel is represented as the Y-axis direction (mm) of the substrate to be processed. The measurement position is 922...

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Abstract

The invention provides a sputtering method. The film layer of the peripheral part of a substrate to be treated is prevented from drooping by a simple method to realize even film thickness distribution. At least three target pairs are arranged on the same plane in parallel; magnetic circuits are configured in parallel at the rear of each target; electric power is supplied by sputtering power supplies connected onto target pairs at both ends in the direction of arranging the magnetic circuits in parallel according to the specified electric power ratio; the electric power is higher than that supplied by sputtering power supplies connected onto target pairs clamped by the target pairs at both ends; and moreover, the magnetic field intensity of both end parts in the direction which is vertical to the direction of arranging the magnetic circuits in parallel is enhanced.

Description

technical field [0001] The invention relates to a sputtering method for forming a thin film on a processed substrate, in particular to a multi-cathode sputtering method for arranging a plurality of targets in parallel to form a thin film on a large-area processed substrate. Background technique [0002] In recent years, the sputtering technology for forming a thin film on a large-area substrate has been developed mainly in the field of displays such as liquid crystals. When forming a thin film on a large-area substrate to be processed by sputtering, a method of arranging multiple targets on the same plane facing the substrate to be processed in a vacuum chamber is used. [0003] However, the surfaces of the targets are all arranged parallel to the substrate to be processed, and when a film is formed on a substrate to be processed that has an outer dimension larger than that of all the targets arranged side by side, the surface reaches the two sides of the substrate to be pro...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35
Inventor 大野遥平矶部辰德新井真赤松泰彦小松孝
Owner ULVAC INC