Integrated circuit device and method of manufacturing same

Abstract

An integrated circuit device and method for manufacturing the integrated circuit device is disclosed. The disclosed method provides improved control over a surface proximity and tip depth of integrated circuit device. In an embodiment, the method achieves improved control by forming a lightly doped source and drain (LDD) region that acts as an etch stop. The LDD region may act as an etch stop during an etching process implemented to form a recess in the substrate that defines a source and drain region of the device.

Description

technical field [0001] The present invention relates to several integrated circuit components and methods of making several integrated circuit components. Background technique [0002] The semiconductor integrated circuit (IC) industry has experienced rapid growth. In the course of integrated circuit development, functional density (ie, the number of interconnected elements per chip area) has generally has been increased. This size reduction process often offers the advantage of increased production efficiency and reduced associated costs. Such size reductions have also increased the complexity of handling and manufacturing integrated circuits, and similar developments in integrated circuit manufacturing are required in order to realize these advances. For example, as semiconductor components, such as metal-oxide-semiconductor field-effect transistors (MOSFETs), shrink in size through many technology nodes, epitaxial semiconductor materials have been utilized to implement...

AI Technical Summary

Problems solved by technology

Although existing methods have generally served their intended purpose, these techniques have not been completely satisfactory in all respects

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