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Method and apparatus for reduction of voltage potential spike during dechucking

A lifting device and electrode technology, applied in the application of electrostatic attraction holding devices, positioning devices, circuits, etc., can solve the problems of polluted substrates, damaged substrates, difficult substrates, etc.

Active Publication Date: 2012-02-22
LAM RES CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these techniques are not fully effective in removing all charges on the electrodes and substrate
Mechanical force is often required to overcome residual electrostatic attraction, which can damage the substrate or create difficulties in retracting the substrate from an unintended location
Also, unwanted particles may be generated during the substrate detachment and removal process, contaminating the processed substrate

Method used

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  • Method and apparatus for reduction of voltage potential spike during dechucking
  • Method and apparatus for reduction of voltage potential spike during dechucking
  • Method and apparatus for reduction of voltage potential spike during dechucking

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Embodiment Construction

[0016] As used herein, the term "about" when used with a set value or range means slightly larger or slightly smaller than the set value or range, and within ±10% of the set value or range.

[0017] This article describes a method that can reduce the detachment of the peak potential during detachment from the ESC.

[0018] The substrate may include a semiconductor wafer used for manufacturing integrated circuits, a substrate used for 3-D chip integration, a glass substrate used for manufacturing a flat panel display, or a silicon wafer bonded to a glass carrier.

[0019] The preferred embodiment is implemented in combination with a plasma reactor, such as a capacitively coupled plasma reactor, such as Exelan TM Plasma etchers are available from Lam Research Corporation of Fremont, California (Rum Research Corporation of Fremont, California).

[0020] The preferred plasma reactor includes a dual-frequency capacitively coupled plasma reactor, the dual-frequency capacitively coupled plas...

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PUM

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Abstract

Provided is a substrate dechucking system of a plasma processing chamber adapted to remove a substrate from an ESC with reduction in voltage potential spike during dechucking of the substrate.

Description

Background technique [0001] Electrostatic chucks are used to hold semiconductor wafers and other substrates during processing such as plasma etching. An electrostatic chuck (ESC) uses electrostatic potential to hold (clamp) the substrate in place during processing. By clamping the substrate to the chuck, a gas with high thermal conductivity such as helium (He) is disposed between the substrate and the chuck to improve heat transfer between the substrate and the chuck. The substrate is removed from the electrostatic chuck by the lift pins, and the transfer arm removes the substrate from the processing chamber. [0002] The difficulty in using ESC is that in order to remove the substrate from the chuck, the electrostatic force remaining between the substrate and the chuck needs to be removed. This residual force is caused by the accumulation of charge at the interface between the substrate and the ESC support surface. Several techniques have been developed for removing or de-chuc...

Claims

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Application Information

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IPC IPC(8): H01L21/687B23Q3/15H02N13/00H01L21/3065
CPCH01J37/32788H01L21/6833H01L21/68742Y10T279/23
Inventor 布莱恩·麦科米林约瑟·V·唐耶-库恩·维克特·王
Owner LAM RES CORP