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Coating method of photoresist

A photoresist and coating technology, which is applied in the direction of photolithographic coating equipment, electrical components, semiconductor/solid-state device manufacturing, etc., can solve the problems of semiconductor wafer scrapping, increasing production costs, and affecting the integrity of semiconductor devices, etc.

Inactive Publication Date: 2012-03-14
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Whether it is the overlapping phenomenon of semiconductor devices or the damage of semiconductor structures or devices, it will affect the integrity of semiconductor devices on the entire wafer, and even lead to the scrapping of semiconductor wafers, thereby increasing production costs and reducing yield

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  • Coating method of photoresist
  • Coating method of photoresist
  • Coating method of photoresist

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Embodiment Construction

[0026] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.

[0027] In order to thoroughly understand the present invention, detailed steps will be set forth in the following description in order to illustrate the photoresist coating method of the present invention. Obviously, the practice of the invention is not limited to specific details familiar to those skilled in the semiconductor arts. Preferred embodiments of the present invention are described in detail below, however, the present invention may have other embodiments besides these detailed descriptions.

[0028] The step of the coating method of photoresist of ...

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Abstract

The invention provides a coating method of a photoresist. The coating method comprises the following steps: (a) providing a semiconductor wafer; (b) pre-processing the semiconductor wafer, namely coating an organic solvent on the surface of the semiconductor wafer; and (c) coating the photoresist on the surface of the semiconductor wafer. By adopting the coating method, the subsequently formed photoresist layer contains hardly air bubbles so as to prevent the problem that etching gas passes through the air bubbles to damage the semiconductor wafer due to consumption of the photoresist during the etching process.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a photoresist coating method. Background technique [0002] The photolithography process is one of the most frequently used and most critical technologies in semiconductor manufacturing technology. For semiconductor components, optoelectronic devices, etc., it is necessary to use the photolithography process to transfer the mask patterns of the basic components and circuits of the required components to the substrate. photoresist on the bottom surface. Therefore, the stability, reliability and process yield of the photolithography process have an important impact on the quality, yield and cost of the product. Generally, the basic process of photolithography includes three steps: coating, exposure and development. [0003] At present, a photoresist layer is usually formed on the surface of a semiconductor wafer by using a spin coating method. The semiconductor wafer can b...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/16H01L21/027
Inventor 杨晓松
Owner SEMICON MFG INT (SHANGHAI) CORP