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Protective device of low voltage structure for high voltage electrostatic discharge protection

A technology of electrostatic discharge protection and electrostatic discharge, which is applied in the direction of circuits, electrical components, electric solid devices, etc.

Active Publication Date: 2012-04-11
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The low maintenance voltage characteristics of high-voltage devices make the power-on peak voltage or surge voltage cause noise, and also cause high-voltage devices to be triggered due to noise during normal operation. , causing latch-up

Method used

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  • Protective device of low voltage structure for high voltage electrostatic discharge protection
  • Protective device of low voltage structure for high voltage electrostatic discharge protection
  • Protective device of low voltage structure for high voltage electrostatic discharge protection

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Embodiment Construction

[0036] Some embodiments in accordance with the present invention will utilize BCD processing to provide a relatively small size, low voltage structure for high voltage ESD protection. In addition, some embodiments according to the present invention will provide a BJT and MOS structure with a total area smaller than that of a diode, so as to provide the same ESD protection performance (ESD performance). Some embodiments may also have a breakdown voltage close to the operating voltage of the high voltage device and a trigger voltage lower than the breakdown voltage of the high voltage device. In addition, compared with using a Silicon Controlled Rectifier (SCR), an embodiment of the present invention can provide a relatively higher holding voltage, which can more easily avoid the occurrence of latch-up. In some cases, standard BCD processes can be utilized without additional masks or process steps to provide various embodiments of the present invention.

[0037] The polysilicon...

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Abstract

The invention discloses a low voltage structure for high voltage electrostatic discharge (electrostatic discharge, ESD) protection. The electrostatic discharge protective device comprises a substrate, an N+doped buried layer, an N-type well region and a P-type well region. The N+doped buried layer can be arranged close to the substrate. The N-type well region can be arranged close to one part of the N+doped buried layer, so as to form a collector region. The P-type well region can be arranged close to the rest part of the N+doped buried layer and at least one P+doped plate corresponds to a base region, and a plurality of distributed N+doped plate region sections correspond to an emitter region.

Description

technical field [0001] Embodiments of the present invention relate to a semiconductor device, and more particularly to a low-voltage structure protection device for high-voltage Electrostatic Discharge (ESD). Background technique [0002] In recent years, the manufacture of almost all electronic devices is moving toward the goal of miniaturization. Electronic devices with a smaller size are more popular than larger and bulky electronic devices with the same function. Since miniaturized devices need to be composed of tiny components, the ability to manufacture miniaturized components will obviously make the production of miniaturized devices easier. However, many current electronic devices must have circuit devices capable of performing actuation functions and data processing or other decision-making functions. The devices capable of performing actuation functions are, for example, switching devices. It is not always possible to manufacture such dual function devices using ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/60
Inventor 陈信良陈永初
Owner MACRONIX INT CO LTD