Semiconductor Element And Manufacturing Method Thereof

Abstract

The invention provides a semiconductor element and a manufacturing method thereof. The semiconductor element includes a second semiconductor layer comprising first columns in a first conductive type and second columns in a second conductive type arranged alternately in a direction of a main surface of the first semiconductor layer; a first control electrode embedded in a groove arranged in a direction from the surface of the second semiconductor layer to the first semiconductor layer; and a second control electrode arranged on the second semiconductor layer connecting with the first control electrode. A first semiconductor area in the second conductive type is arranged on the surface of the second semiconductor except a part covered by the second control electrodes. A second semiconductor area in the first conductive type are arranged selectively and separately with the surface of the second semiconductor layer covered by the second control electrodes on the surface of the first conductive area. Besides, a third semiconductor area in the second conductive type neighboring to the second semiconductor area is arranged on the surface of the first semiconductor area selectively.

Description

[0001] This application is based on and claims priority from prior Japanese Patent Application No. 2010-210476 filed on September 21, 2010, the entire contents of which are hereby incorporated by reference. technical field [0002] Embodiments of the present invention relate to a semiconductor element and a method for manufacturing the semiconductor element. Background technique [0003] Power semiconductor elements such as MOSFET (Metal Oxide Semiconductor Field Effect Transistor, Metal Oxide Semiconductor Field Effect Transistor) or IGBT (Insulated Gate Bipolar Transistor, Insulated Gate Bipolar Transistor) have high-speed switching (switching) characteristics, tens to hundreds of volts (V) reverse blocking voltage (blocking voltage) (withstand voltage), and thus widely used in power conversion and control of household appliances, communication equipment, vehicle motors, etc. Furthermore, in order to improve the efficiency of these devices and reduce power consumption, sem...

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Problems solved by technology

[0004] However, there is a problem that if a bias voltage is applied to the super junction structure, the capacitance of the pn junction will decrease sharply, and the output capacitance of the semiconductor element will greatly change

That is, the switching noise (switching noise) depending on the output capacitance of the semiconductor element having a super junction structure is high

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