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Device and method for detecting interference storage unit in semiconductor storage device

A storage unit and storage device technology, applied in information storage, static memory, read-only memory, etc., can solve problems such as undesired data changes and read errors, reducing the threshold voltage of the second storage unit, etc.

Active Publication Date: 2015-04-15
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In some cases, a high erase voltage used to erase a first memory cell can undesirably affect a second memory cell, for example, causing electrons to be transferred from the floating gate of the second memory cell, thus reducing the second memory cell's floating gate. Threshold voltage of two memory cells
Such unexpected changes can lead to undesired data changes and read errors

Method used

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  • Device and method for detecting interference storage unit in semiconductor storage device
  • Device and method for detecting interference storage unit in semiconductor storage device
  • Device and method for detecting interference storage unit in semiconductor storage device

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Embodiment Construction

[0027] figure 2 A schematic block diagram of an exemplary nonvolatile semiconductor memory device is shown. figure 2 The memory device shown in is used as an example of the present invention to illustrate its improved memory cell disturbance detection. Those skilled in the art can conceive that the architecture of the storage device of the present invention can have other changes without departing from the spirit taught by the present invention.

[0028] figure 2 The memory device shown in shows a non-volatile semiconductor memory device, which includes a sequential circuit 1, a word line driver 3, a bit line decoder 5, a reference word line driver 7, sense amplifiers 9 and 10, A comparison circuit 11, dummy memory cells 12, memory cells MC0 to MCn, a reference cell RC, a word line WL, a reference word line RWL, bit lines BL0 to BLn, and a reference bit line RBL.

[0029] The word line driver 3 and the reference word line driver 7 are connected to the sequential circuit ...

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Abstract

The invention discloses a device and method for detecting an interference storage unit in a semiconductor storage device. The method for detecting the interference situation of a storage unit comprises: applying a plurality of array conditions to the storage unit and determining whether the storage unit has an action of a program storage unit when responding to the plurality of array conditions; and if the storage unit responds to a group of conditions as programmed and as erased for another group of conditions, identifying that the storage unit an interfered storage unit.

Description

technical field [0001] The present invention relates to an electronic storage device, in particular to a device and method for detecting a disturbed storage unit in a semiconductor storage device. Background technique [0002] Semiconductor memory devices are widely used and can be found in many electronic devices. Most semiconductor memory devices can be classified into volatile or nonvolatile types. A volatile memory device requires power to retain stored data, while a non-volatile memory device can retain stored data without power. [0003] Flash memory is a well-known type of non-volatile memory. A typical flash memory includes a memory array in which memory cells are arranged in rows and columns. Each memory cell includes a floating gate field effect transistor. The logic state of a memory cell is determined by the threshold voltage of the transistor, which is determined by the number of electrons in the floating gate of the transistor. The electrons in the floatin...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/06
Inventor 洪俊雄林政宽张坤龙
Owner MACRONIX INT CO LTD