Unlock instant, AI-driven research and patent intelligence for your innovation.

source of ion

A technology of ion source and plasma, applied in the field of ion source

Active Publication Date: 2015-09-30
VARIAN SEMICON EQUIP ASSOC INC
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

All of these facts limit the emittance control of ion beams from existing ion sources

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • source of ion
  • source of ion
  • source of ion

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] The present invention will now be described more fully herein with the accompanying drawings as a reference, in which embodiments of the present invention are shown. However, the present invention can be embodied in many different forms, and should not be construed as being limited to the embodiments presented herein.

[0020] Please refer to figure 2 , figure 2 Shown is a cross-sectional view of the ion source 200 according to an embodiment of the present disclosure. The ion source 200 includes an arc chamber 102 having a side wall 103 with an extraction aperture 110. The ion source 200 further includes a plasma sheath modulator 220 to control the shape of the boundary 241 located between the plasma 140 and the plasma sheath 242 close to the extraction aperture 110. The extraction electrode assembly extracts ions 106 from the plasma 140 and accelerates the ions 106 through the plasma sheath 242 to the required extraction energy of the well-defined ion beam 218. The ex...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An ion source includes an arc chamber having an extraction aperture, and a plasma sheath modulator. The plasma sheath modulator is configured to control a shape of a boundary between plasma and a plasma sheath proximate the extraction aperture. The plasma sheath modulator may include a pair of insulators positioned in the arc chamber and spaced apart by a gap positioned proximate the extraction aperture. A well focused ion beam having a high current density can be generated by the ion source. A high current density ion beam can improve the throughput of an associated process. The emittance of the ion beam can also be controlled.

Description

Technical field [0001] The present disclosure relates to an ion source, and more particularly to an ion source with a plasma sheath modulator. Background technique [0002] The ion source is a key component of ion implanters and other process equipment. The ion source generally includes an arc chamber for receiving feed gas. The feed gas is ionized in the arc chamber by different existing technologies to generate plasma. Plasma is generally a quasi-neutral collection of ions (usually with positive charges) and electrons (with negative charges). In the entire plasma, the plasma has an electric field of 0 volts per centimeter. The plasma is confined to an area generally called the plasma sheath. The plasma sheath is a region that has fewer electrons than plasma. The light emission from the plasma sheath is less intense than that of the plasma because fewer electrons are present and therefore less excitation-relaxation collisions occur. Therefore, the plasma sheath is sometime...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H05H1/24H01J37/08H01J37/32H01J27/02
CPCH01J2237/083Y10S438/961H01J2237/0451H01J2237/08H01J37/09H01J2237/31701H01J2237/0456H01J2237/31H01J27/024H01J2237/0453H01J2237/065H01J37/08
Inventor 卢多维克·葛特史费特那·瑞都凡诺提摩太·J·米勒
Owner VARIAN SEMICON EQUIP ASSOC INC