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Semiconductor substrate, electronic device, semiconductor substrate manufacturing method, and electronic device manufacturing method

A manufacturing method and technology of electronic devices, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve problems such as difficult to ensure lead-out areas

Inactive Publication Date: 2012-05-02
SUMITOMO CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, when the area of ​​the formed compound semiconductor is small, it is difficult to secure a lead-out area for the wiring of electronic components such as LEDs or HBTs

Method used

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  • Semiconductor substrate, electronic device, semiconductor substrate manufacturing method, and electronic device manufacturing method
  • Semiconductor substrate, electronic device, semiconductor substrate manufacturing method, and electronic device manufacturing method
  • Semiconductor substrate, electronic device, semiconductor substrate manufacturing method, and electronic device manufacturing method

Examples

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Embodiment 1

[0194] A semiconductor substrate 2300 was produced, and an electronic device was produced using this semiconductor substrate 2300 . The semiconductor substrate 2300 includes a base substrate 2302 , an inhibitor 2306 , a seed body 2312 , and a compound semiconductor 2314 . As the base substrate 2302 , an n-type low-resistance Si substrate in which the entire Si substrate was doped with antimony (Sb) as an impurity was used. The resistivity of the low-resistance Si substrate was 0.01 Ω·cm.

[0195] A silicon oxide layer was formed as the inhibitor 2306 by a thermal oxidation method. The average thickness of the silicon oxide layer was 0.1 μm. A plurality of openings are formed in a part of the silicon oxide layer by photolithography. The size of the opening is 20 μm×20 μm.

[0196] After openings were formed in the silicon oxide layer, the base substrate 2302 was placed inside the reaction vessel, and a Ge crystal layer was formed as the seed crystal body 2312 by the CVD met...

Embodiment 2

[0205] In the same manner as in Example 1, a silicon oxide layer was formed on a Si substrate as a barrier 2306 , and a plurality of openings exposing the base substrate 2302 were formed in a part of the barrier 2306 . This base wafer 2302 was placed in a reaction container, and a Ge crystal layer was formed as a seed crystal body 2312 by a CVD method. The Ge crystal layer is selectively formed inside the opening of the silicon oxide layer. The growth conditions of the Ge crystal layer are the same as in Example 1. Annealing of the Ge crystal layer was carried out in the reaction vessel. Annealing conditions are the same as in Example 1.

[0206] After the Ge crystal layer was annealed, a GaAs layer was formed as a compound semiconductor 2314 by MOCVD. The GaAs layer uses trimethylgallium and arsine as raw material gases. The growth of the GaAs crystal was started at a low temperature of 550°C, and then film formation was performed at a temperature of 640°C. The arsine pa...

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Abstract

The invention provides a semiconductor substrate and a manufacturing method thereof, an electronic device and a manufacturing method thereof. The semiconductor substrate, comprises: a base substrate having an impurity region having impurity atoms doped into silicon; a plurality of seed bodies provided in contact with the impurity region; and a plurality of compound semiconductors provided in contact with the respective seed bodies and lattice-matched or psedo-lattice matched with the respective seed bodies. The semiconductor substrate may further comprise a blocking body provided on the base substrate and having a plurality of openings for exposing at least part of the impurity region.

Description

technical field [0001] The present invention relates to a semiconductor substrate, an electronic device, a method for manufacturing the semiconductor substrate, and a method for manufacturing the electronic device. Background technique [0002] Patent Document 1 discloses a configuration in which three LED arrays containing nitride III-V compound semiconductor materials are lattice-matched to silicon and formed on a silicon substrate. [0003] (Patent Document 1) Japanese Patent Application Laid-Open No. 8-274376 [0004] Optical elements such as LED (Light Emitting Diode) and high-frequency amplifier elements such as HBT (Heterojunction Bipolar Transistor) can be manufactured at low cost by using a semiconductor substrate in which a crystal thin film such as a III-V compound semiconductor is formed on a silicon substrate . To improve the performance of these devices, it is indispensable to improve the crystallinity of compound semiconductors. [0005] The inventors of th...

Claims

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Application Information

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IPC IPC(8): H01L21/20H01L21/331H01L21/8222H01L21/8232H01L21/8248H01L21/8249H01L27/06H01L27/08H01L27/082H01L29/737H01L31/10H01L33/34
CPCH01L21/02639H01L21/02521H01L29/7371H01L31/0312H01L21/0245H01L21/02546H01L31/1852H01L31/03044H01L21/0262Y02E10/544H01L29/66318H01L31/0304H01L21/02381Y02P70/50H01L21/20H01L27/06
Inventor 山中贞则秦雅彦福原升
Owner SUMITOMO CHEM CO LTD
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