Unlock instant, AI-driven research and patent intelligence for your innovation.

Adaptive parametric power amplifier protection circuit

A power amplifier and protection circuit technology, which is applied in the layout of amplifier protection circuits, power amplifiers, amplifiers, etc., can solve the problems of increased output voltage of power amplifier circuits and damage of top transistor drain to gate voltage.

Inactive Publication Date: 2015-01-28
QUALCOMM INC
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

While this prevents each transistor from reaching its breakdown voltage, the drain-to-gate voltage of the top transistor can cause damage when the output voltage peaks
Furthermore, if the output of the power amplifier circuit is attached to an antenna, a change in the voltage standing wave ratio (VSWR) of the antenna may cause the output voltage of the power amplifier circuit to increase to even greater voltage levels

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Adaptive parametric power amplifier protection circuit
  • Adaptive parametric power amplifier protection circuit
  • Adaptive parametric power amplifier protection circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0016] The word "exemplary" is used herein to mean "serving as an example, instance, or illustration." Any embodiment described herein as "exemplary" need not be construed as preferred or advantageous over other embodiments.

[0017] The specific implementations described below in conjunction with the accompanying drawings are intended as descriptions of exemplary embodiments of the present invention, and are not intended to represent the only embodiments in which the present invention can be practiced. The term "exemplary" used throughout this description means "serving as an example, instance, or illustration" and need not be construed as being preferred or advantageous over other exemplary embodiments. The detailed description includes specific details for the purpose of providing a thorough understanding of the exemplary embodiments of the present invention. Those skilled in the art will readily understand that the exemplary embodiments of the present invention can be practi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A device including a gain control element coupled prior to or within a radio frequency (RF) power amplifier (PA) with an adaptive parametric PA protection circuit is described. In an exemplary embodiment, the device includes a gain control element coupled prior to a radio frequency power amplifier with a power stage with corresponding transistor breakdown threshold values, having an adaptive parametric PA protection circuit configured to receive at least one power stage drain-source voltage parameter value, at least one power stage drain-gate voltage parameter value, and at least one power stage drain-source current parameter value, and including an adaptive parametric PA protection circuit having a first section for processing the parameter values and a second section for generating a gain correction signal to adjust the gain control element with optimal power added efficiency (PAE) for the power stage within the corresponding transistor breakdown threshold values.

Description

Technical field [0001] The present invention generally relates to electronic equipment, and more specifically, to adaptive parametric power amplifier protection circuits. Background technique [0002] In communication devices designed to transmit signals, such as cellular devices, power amplifier circuits are often used to amplify the desired signal to allow proper transmission. For example, the power amplifier circuit can be implemented using complementary metal oxide semiconductor (CMOS) technology or bipolar junction transistor (BJT) technology. For example, the power amplifier circuit may include two or more cascaded gain stages, one driver stage, and one power stage. The power stage may include CMOS transistors or BJT transistors. Both the CMOS transistor and the BJT transistor have a breakdown voltage, and if the breakdown voltage is exceeded, the transistor may be damaged. The breakdown voltage is the maximum voltage, which may cause damage to the transistor when applie...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H04B1/04H03F1/52
CPCH03F1/523H03F2200/468H04B1/0466H03F3/24H03F2200/447H03F1/52H04B1/04
Inventor 阿里斯托泰莱·哈奇克里斯托斯居尔卡瓦·S·萨霍塔
Owner QUALCOMM INC