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Chemical-mechanical grinding method

A chemical-mechanical and grinding method technology, used in grinding devices, grinding machine tools, electrical components, etc., can solve the problems of wafer surface chromatic aberration and poor film thickness uniformity on the wafer surface, achieve uniform grinding rate and avoid roughness decline. , to avoid the effect of scratches

Inactive Publication Date: 2012-05-16
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
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Problems solved by technology

[0008] The problem to be solved by the present invention is to provide a method for chemical mechanical polishing, which improves the problem of poor color difference on the wafer surface and poor uniformity of film thickness on the wafer surface after the chemical mechanical polishing process, and improves the stability of the chemical mechanical polishing process. sex

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Embodiment Construction

[0027] After the existing chemical mechanical polishing process, there is obvious color difference on the surface of the wafer, and the thickness uniformity of the film layer on the surface of the wafer obtained by the film thickness tester is not good. After research by the inventor, it was found that the reasons for the chromatic aberration on the surface of the wafer and the poor uniformity of film thickness on the surface of the wafer are: the end point detection (end point detection) of the end point detection module of the chemical mechanical polishing equipment is inaccurate, resulting in the inaccurate stop time of the chemical mechanical polishing process. To be precise, part of the film layer that should not be removed is ground or / and part of the film layer that should be removed is not removed, so that the thickness of the film layer on the surface of the wafer is uneven and there is color difference.

[0028] In order to illustrate the existing chemical mechanical ...

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Abstract

The invention provides a chemical-mechanical grinding method. The chemical-mechanical grinding method comprises the following steps of: providing a wafer and chemical-mechanical grinding equipment, wherein the wafer is provided with a stop layer, a grinding layer is arranged above the stop layer, and the chemical-mechanical grinding equipment is provided with a grinding pad; finishing the grinding pad; grinding the wafer in a plurality of steps by using the finished grinding pad, wherein time of each grinding step is smaller than or equal to the optimal grinding time, and sum of time of respective grinding steps is larger than the optimal grinding time; and using the chemical-mechanical grinding equipment to detect the stop layer after the respective grinding steps, finishing the grinding pad if the stop layer is not detected, or stopping the grinding step if the stop layer is detected. As the chemical-mechanical grinding method is adopted, thickness uniformity and chromatic aberration of a membrane on a surface of the grinded wafer are promoted, and scratches on the surface of the wafer caused by a grinding technology are reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a chemical mechanical grinding method. Background technique [0002] With the rapid development of Ultra Large Scale Integration (ULSI), the manufacturing process of integrated circuits has become more and more complex and refined. In order to improve the integration level and reduce the manufacturing cost, the characteristic size of the components is continuously reduced, and the number of components per unit area of ​​the chip is continuously increasing. It is difficult for the planar wiring to meet the high-density requirements of the components. Only the multi-layer wiring technology can be used. Space, and further increase the integration density of the device. However, the application of multi-layer wiring technology will cause the surface of the chip to be uneven, which is very unfavorable for pattern production. Therefore, it is necessary to planarize the undulat...

Claims

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Application Information

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IPC IPC(8): B24B37/04H01L21/304
Inventor 李协吉
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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