Under-bump metallization (ubm) structure and method of forming the same
A technology of metallization and metallization layer under bump, applied in the direction of semiconductor/solid-state device parts, semiconductor devices, electrical components, etc., can solve the problems of open circuit failure, interface cracks, reducing connection strength and device service life, etc.
Active Publication Date: 2012-05-16
TAIWAN SEMICON MFG CO LTD
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- Description
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- Application Information
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Problems solved by technology
This rapid dissolution and migration can lead to open circuit failures and interface cracks, which reduce connection strength and device lifetime
Method used
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[0029] The present disclosure provides UBM formation processes for use in semiconductor devices applied to flip-chip assembly, wafer-level chip-scale packaging (WLCSP), three-dimensional integrated circuit (3D-IC) stacking, and / or any advanced packaging technologies. Embodiments described herein relate to methods of forming solder bumps for use with semiconductor devices. Example embodiments depicted in the accompanying drawings will now be described in detail. Wherever possible, the same reference numbers will be used in the drawings and specification to refer to the same or like parts. In the drawings, shapes and thicknesses are exaggerated for illustration and convenience. In light of the present disclosure, the description is particularly directed to elements forming part of, or cooperating more directly with, a device. It is to be understood that elements not explicitly shown or described may take various shapes well known to those of ordinary skill in the art. Further...
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Abstract
An under-bump metallization (UBM) structure in a semiconductor device includes a copper layer, a nickel layer, and a Cu-Ni-Sn intermetallic compound (IMC) layer between the copper layer and the nickel layer.
Description
[0001] cross reference [0002] This application claims priority to US Provisional Patent Application No. 61 / 394,192, filed October 18, 2010, which is hereby incorporated by reference. technical field [0003] The present disclosure relates to the fabrication of semiconductor devices, and more particularly, to the fabrication of under bump metallization (UBM) structures in semiconductor devices. Background technique [0004] Modern integrated circuits are composed of millions of active and / or passive devices such as transistors and capacitors. These devices are initially isolated from each other, but then interconnected together to form a functional circuit. Typical interconnect structures include lateral interconnects, such as metal lines (wires), and vertical interconnects, such as vias and contacts. Interconnect structures increasingly determine the performance and density limits of modern integrated circuits. On top of the interconnect structure, bond pads are formed ...
Claims
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IPC IPC(8): H01L23/488H01L23/522H01L23/00H01L21/60
CPCH01L2224/03912H01L2224/13023H01L2924/0105H01L2224/0361H01L2224/05155H01L2224/03464H01L2924/13091H01L2224/05084H01L2224/05111H01L2224/0401H01L2224/1147H01L2224/0347H01L24/11H01L2924/01013H01L2224/0508H01L2224/03901H01L2224/05187H01L2224/05166H01L2924/01074H01L2924/01073H01L2224/05655H01L2224/03614H01L2224/03903H01L2924/01023H01L2924/01082H01L23/49811H01L2224/05027H01L2924/01019H01L2924/01322H01L2924/01327H01L2924/01029H01L2924/00013H01L2224/11849H01L2224/05181H01L2924/014H01L2924/01024H01L2224/05572H01L2224/05644H01L2224/0345H01L24/03H01L2924/01047H01L2924/01079H01L24/05H01L24/13H01L2224/03462H01L21/76885H01L2924/01006H01L2224/03848H01L2224/03424H01L2224/05147H01L2224/05664H01L2224/13111H01L2924/1306H01L2924/1305H01L2924/00014H01L2924/14H01L2924/04941H01L2924/04953H01L2924/013H01L2924/01046H01L2924/01039H01L2924/01016H01L2924/0103H01L2924/01083H01L2924/01049H01L2924/01051H01L2924/01028H01L2224/034H01L2224/13099H01L2224/05099H01L2224/13599H01L2224/05599H01L2224/29099H01L2224/29599H01L2924/00H01L2224/05552H01L21/76886H01L23/535
Inventor 蔡宗甫郭彦良张志鸿
Owner TAIWAN SEMICON MFG CO LTD