Semiconductor devices with improved local matching and end resistance of diffusion resistors

Abstract

Semiconductor devices are formed with reduced variability between close proximity resistors, improved end resistances, and reduced random dopant mismatch. Embodiments include ion implanting a dopant, such as B, at a relatively high dosage, e.g. about 4 to about 6keV, and at a relatively low implant energy, e.g., about 1.5 to about 2E15 / cm2.

Description

technical field [0001] The present invention relates to the formation of miniaturized transistor devices with resistors on the active area. The present disclosure is particularly applicable to semiconductor devices formed with the 32 nanometer (nm) technology node and smaller. Background technique [0002] Typically, resistors in integrated circuits are formed with polysilicon gate electrodes, especially in various analog applications in 45nm products. However, as the size of transistor devices continues to shrink, various problems occur, and there is an increased demand for methods capable of manufacturing semiconductor devices with high reliability and high circuit speed. Smaller transistors require reduced feature sizes. When the gate width for the transistor is reduced, the polysilicon thickness is reduced, that is, less than The resistance of the resistor is adversely affected. [0003] An attractive alternative to polysilicon resistors is the RX based resistor (RX...

AI Technical Summary

Problems solved by technology

However, this approach would require undesired shielding changes to existing designs to allow additional implants only at the resistor ends, thereby reducing manufacturing yield and increasing cost

It will also adversely affect the sheet resistance of small length resistors

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