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Method for monitoring film thickness

A technology of film thickness and film, which is applied in the field of film thickness monitoring, can solve the problems of film damage and inability to accurately monitor film thickness, and achieve the effect of fast measurement speed

Active Publication Date: 2012-05-23
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in some cases, for example, when the thickness of the film is less than 300 nanometers, the ellipsometer produced by some manufacturers cannot accurately monitor the thickness of the film, so that it cannot be judged by comparing the thickness relationship of different batches of films prepared under the same process conditions. Whether the machine drifts, the thickness of the film can be monitored more accurately by using other technical means, but it will damage the film

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  • Method for monitoring film thickness

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Embodiment Construction

[0025] It is known from the background technology that some ellipsometers have certain requirements on the thickness of the film when measuring the film. When the thickness is too thin or too thick, the measurement result will deviate from the actual thickness, the measurement accuracy will be reduced, or the measurement will be repeated. The performance does not meet the requirements, resulting in unreliable measurement results. In this regard, the inventors of the present invention have creatively studied the relationship between the thermal wave signal measured by thermal wave technology and the thickness of the film, and found that there is a correlation between the thermal wave signal and the thickness of the film. Here, in this The invention provides a method for monitoring film thickness.

[0026] The film thickness monitoring method provided by the present invention monitors whether the film thicknesses of different batches are the same by measuring and comparing the t...

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Abstract

A method for monitoring thin film thickness is disclosed, and comprises the steps of: providing a substrate, a reference thin film and a reference heat wave signal; providing the substrate and depositing the thin film on the surface of the substrate; doping for the thin film; performing heat wave measurement for the doped thin film to obtain a heat wave signal; comparing the heat wave signal obtained with the reference heat wave signal, wherein if the absolute value of the difference between the heat wave signal obtained and the reference heat wave signal is smaller than 1 / 100 of the reference heat wave signal, the thin film obtain is equal to the reference thin film in thickness. The method for monitoring thin film thickness provided by the invention judges whether the table deviates or not and whether the set technical menu meets the requirement or not by measuring and comparing the heat wave signals of the thin films to monitor whether the thin films of different batches are same. In addition, the monitoring method provided by the invention is fast in measurement without damaging samples.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for monitoring film thickness. Background technique [0002] Thickness is an important parameter of the film. By monitoring and comparing the thickness values ​​of different batches of film samples, it is an important means in the industry to judge whether the process machine is stable and whether the process parameters meet the needs. There are many technical means for monitoring film thickness in the industry, such as ellipsometer, transmission electron microscope, secondary mass spectrometer, etc. However, the use of transmission electron microscopy and secondary mass spectrometry to monitor the thickness of the film requires damage to the sample, so ellipsometry is a relatively preferred monitoring method. However, in some cases, for example, when the thickness of the film is less than 300 nanometers, the ellipsometer produced by some manufacturers cannot acc...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01B11/06H01L21/66
Inventor 何永根史运泽
Owner SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP