Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Manufacturing method of LED (Light Emitting Diode) electrodes with equal heights

A manufacturing method and electrode technology, which can be applied to circuits, electrical components, semiconductor devices, etc., and can solve problems such as difficulty in connecting chips and circuits, reliability problems, etc.

Inactive Publication Date: 2012-05-23
孙智江
View PDF4 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, metal balls are difficult to make into balls, usually flat, which brings difficulties to flip-chip and circuit connections, and may also cause reliability problems

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method of LED (Light Emitting Diode) electrodes with equal heights
  • Manufacturing method of LED (Light Emitting Diode) electrodes with equal heights
  • Manufacturing method of LED (Light Emitting Diode) electrodes with equal heights

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] See attached figure 1 to attach Figure 5 , a method for manufacturing LED equal-height electrodes, comprising the steps of

[0026] 1) See attached figure 1 , etch the LED to etch out the N-type area;

[0027] 2) See attached figure 2 , simultaneously depositing SiO2 protective film over the P-type area and N-type area of ​​the LED;

[0028] 3) See attached image 3 , planarizing the deposited SiO2 protective film, that is, using a mechanical grinding method to grind the upper surface of the SiO2 protective film so that the upper surface of the SiO2 protective film forms a horizontal plane;

[0029] 4) See attached Figure 4 , two holes are opened in the SiO2 protective film, the top of the hole is connected with the outside at the outer surface of the SiO2 protective film, and the bottom of the hole is connected with the N-type region; in this embodiment, one hole is arranged on the P-type region One above and connected to the P-type region, one above the N-ty...

Embodiment 2

[0037] A method for forming equal-height electrodes on an N-type region, comprising the following steps

[0038] 1) Etching the LED to etch out the N-type area;

[0039] 2) Deposit a SiO2 protective film over the N-type area of ​​the LED;

[0040] 3) Planarize the deposited SiO2 protective film, that is, use the method of etching back the SiO2 protective film to etch, so that the upper surface of the SiO2 protective film forms a horizontal plane;

[0041] 4) Two holes are opened in the SiO2 protective film, the top of the hole is connected to the outside at the outer surface of the SiO2 protective film, and the bottom of the hole is connected to the N-type region;

[0042] 5) Deposit metal electrodes in the holes;

[0043] 6) The area where the metal electrode is higher than the upper surface of the SiO2 protective film is removed, that is, the excess metal electrode is removed by etching back, and an equal-height electrode can be formed above the N-type area.

Embodiment 3

[0045] A method for forming equal-height electrodes on a P-type region, comprising the following steps

[0046] 1) Deposit a SiO2 protective film over the P-type region of the LED;

[0047] 2) Planarize the deposited SiO2 protective film, that is, use the method of etching back the SiO2 protective film to etch, so that the upper surface of the SiO2 protective film forms a horizontal plane;

[0048]3) Open two holes in the SiO2 protective film, the top of the hole is connected to the outside at the outer surface of the SiO2 protective film, and the bottom of the hole is connected to the P-type region;

[0049] 4) Deposit metal electrodes in the holes;

[0050] 5) The area where the metal electrode is higher than the upper surface of the SiO2 protective film is removed, that is, the excess metal electrode is ground by mechanical grinding, and the equal-height electrode can be formed above the P-type area.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a manufacturing method of LED (Light Emitting Diode) electrodes with equal heights. The manufacturing method comprises the following steps of: 1) depositing an LED protective film on P-type region and / or N-type region of an LED; 2) carrying out flatness treatment on the deposited LED protective film to make the upper surface of the LED protective film form a level surface; 3) opening at least two holes in the LED protective thin film, wherein the top of each hole is communicated with outside at the outer surface of the LED protective film, and the bottom of each hole is connected with the P-type region and / or the N-type region; 4) depositing metal electrodes in the holes; and 5) removing areas of the metal electrodes higher than the upper surface of the LED protective film. According to the manufacturing method of the LED electrodes with equal heights, disclosed by the invention, the shortages of the prior art are prevented, equal heights of PN electrodes are realized, and the connection reliability of an inversion chip and a circuit is improved.

Description

technical field [0001] The invention relates to a method for manufacturing high electrodes such as LEDs. Background technique [0002] The inherent characteristics of LED determine that it has many advantages, (1) small size, LED is basically a small chip packaged in epoxy resin, so it is very small and very light. (2) Low power consumption, LED power consumption is quite low, DC drive, ultra-low power consumption (single tube 0.03-0.06 watts), electro-optical power conversion is close to 100%. Generally speaking, the working voltage of LED is 2-3.6V, and the working current is 0.02-0.03A; that is to say, it consumes no more than 0.1W of power, and the same lighting effect can save more than 80% energy than traditional light sources. (3) Long service life, some people call the LED light source a longevity lamp. It is a solid cold light source, encapsulated by epoxy resin, and there is no loose part in the lamp body. There are no disadvantages such as filament luminescence,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L33/00H01L33/36H01L33/38
Inventor 孙智江
Owner 孙智江
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com