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Metrology method and apparatus, lithographic apparatus, lithographic processing cell and substrate comprising metrology targets

A technology for measuring equipment and targets, which is applied in the field of measurement and can solve problems such as changes and affecting measurement results

Active Publication Date: 2012-05-30
ASML NETHERLANDS BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Because the grating is overfilled, aberrations in the imaging system can cause changes in the grating position to affect measurements

Method used

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  • Metrology method and apparatus, lithographic apparatus, lithographic processing cell and substrate comprising metrology targets
  • Metrology method and apparatus, lithographic apparatus, lithographic processing cell and substrate comprising metrology targets
  • Metrology method and apparatus, lithographic apparatus, lithographic processing cell and substrate comprising metrology targets

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Embodiment Construction

[0024] This specification discloses one or more embodiments that incorporate the features of this invention. The disclosed embodiments are only illustrative of the invention. The scope of the invention is not limited by the disclosed embodiments. The invention is defined by the appended claims.

[0025] Described embodiments and references in the specification to "one embodiment," "an embodiment," "exemplary embodiment," etc. mean that the described embodiments may include a particular feature, structure, or characteristic, but each An embodiment does not necessarily include a specific feature, structure or characteristic. Moreover, these terms are not necessarily referring to the same embodiment. Furthermore, when a particular feature, structure or characteristic is described with respect to an embodiment, it is to be understood that it is within the knowledge of those skilled in the art to implement that feature, structure or characteristic in combination with other embod...

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Abstract

A metrology apparatus is arranged to illuminate a plurality of targets with an off-axis illumination mode. Images of the targets are obtained using only one first order diffracted beam. Where the target is a composite grating, overlay measurements can be obtained from the intensities of the images of the different gratings. Overlay measurements can be corrected for errors caused by variations in the position of the gratings in an image field.

Description

technical field [0001] The present invention relates to methods and devices for metrology, such as may be used in the fabrication of devices by photolithographic techniques, and to methods of fabricating devices using photolithographic techniques. Background technique [0002] A lithographic apparatus is a machine that applies a desired pattern to a substrate, usually to a target portion of the substrate. For example, lithographic equipment may be used in the manufacture of integrated circuits (ICs). In this case, a patterning device, alternatively referred to as a mask or reticle, may be used to generate the circuit pattern to be formed on the individual layers of the IC. The pattern can be transferred onto a target portion (eg, comprising a portion, one or more dies) on a substrate (eg, a silicon wafer). Typically, the pattern is transferred via imaging to a layer of radiation sensitive material (resist) provided on the substrate. Typically, a single substrate will cont...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20
CPCG03F7/70633G03F7/70616G03F7/20
Inventor H·斯米尔德A·邓鲍夫W·考恩阿诺·布里克A·库兰H·柏莱曼斯R·普拉格
Owner ASML NETHERLANDS BV
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