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High-Curie temperature (Tc) lead-free positive temperature coefficient (PTC) thermal sensitive ceramic material

A technology of heat-sensitive ceramics and raw materials, applied in the field of semiconductor ceramic materials, can solve the problems of few reports on the results of heat-sensitive ceramic temperature control materials, and achieve the effect of avoiding the harm of lead to the environment and human body.

Inactive Publication Date: 2012-06-20
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] It can be seen from this that although environmentally friendly PTC thermosensitive ceramic materials have far-reaching social significance and economic benefits, but from the published literature and patents, the Curie temperature is 120-300 ° C, good performance, and positive There are quite few reports on the results of a series of thermosensitive ceramic temperature control materials with temperature coefficients

Method used

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  • High-Curie temperature (Tc) lead-free positive temperature coefficient (PTC) thermal sensitive ceramic material
  • High-Curie temperature (Tc) lead-free positive temperature coefficient (PTC) thermal sensitive ceramic material
  • High-Curie temperature (Tc) lead-free positive temperature coefficient (PTC) thermal sensitive ceramic material

Examples

Experimental program
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Embodiment 1

[0021] The present embodiment main component is by molecular formula (Bi 1-x / 2 K x / 2 )(Zn 1 / 2-x / 2 sn 1 / 2-x / 2 Ti x )O 3 Carry out batching, wherein x=0.8, promptly main component can be simplified as (Bi 0.6 K 0.4 )(Zn 0.1 sn 0.1 Ti 0.8 )O 3 ; The semiconducting element selects W with a valence of +6 +6 , the purpose is to make it to ABO 3 Type perovskite structure B lattice position for semiconducting doping, W +6 The ion content accounts for 0.1 mol% of the total molar amount of Zn, Sn and Ti. The initial raw material is selected from Bi 2 o 3 、K 2 CO 3 , ZnO, Sn, [CH 3 (CH 2 ) 3 O] 4 Ti, H 2 WO 4 . Material preparation is carried out according to the technological steps of following experiment:

[0022] ①Press the initial raw material according to (Bi 0.6 K 0.4 )(Zn 0.1 sn 0.1 Ti 0.8 )O 3 +0.001H 2 WO 4 Formula ingredients, weighing 23.022g Bi 2 o 3 , 4.507g K 2 CO 3 , 1.328g ZnO, 1.986g Sn, 44.394g[CH 3 (CH 2 ) 3 O] 4 Ti and 0.043g H ...

Embodiment 2

[0034] The present embodiment main component is by molecular formula (Bi 1-x / 2 K x / 2 )(Zn 1 / 2-x / 2 sn 1 / 2-x / 2 Ti x )O 3 The batching is carried out, wherein x=0.7; W is selected as the semiconducting element, which accounts for 0.1 mol% of the total molar amount of Zn, Sn and Ti. The initial raw material is selected from Bi 2 o 3 、K 2 CO 3 , ZnO, Sn, [CH 3 (CH 2 ) 3 O] 4 Ti, H 2 WO 4 . Material preparation is carried out according to the technological steps of following experiment:

[0035] ①Press the initial raw material according to (Bi 0.65 K 0.35 )(Zn 0.15 sn 0.15 Ti 0.7 )O 3 +0.001H 2 WO 4 Formula ingredients, weighing 25.829g Bi 2 o 3 , 4.085g K 2 CO 3 , 2.062g ZnO, 3.007g Sn, 40.229g[CH 3 (CH 2 ) 3 O] 4 Ti and 0.044g H 2 WO 4 ;

[0036] ②The preparation process is the same as the steps ②~⑩ in Example 1.

[0037] Prepared material properties are shown in Table 1 and figure 2 shown.

Embodiment 3

[0039] The present embodiment main component is by molecular formula (Bi 1-x / 2 K x / 2 )(Zn 1 / 2-x / 2 sn 1 / 2-x / 2 Ti x )O 3 The batching is carried out, wherein x=0.6; W is selected as the semiconducting element, which accounts for 0.1 mol% of the total molar amount of Zn, Sn and Ti. The initial raw material is selected from Bi 2 o 3 、K 2 CO 3 , ZnO, Sn, [CH 3 (CH 2 ) 3 O] 4 Ti, H 2 WO 4 . Material preparation is carried out according to the technological steps of following experiment:

[0040] ①Press the initial raw material according to (Bi 0.7 K 0.3 )(Zn 0.2 sn 0.2 Ti 0.6 )O 3 +0.001H 2 WO 4 Formula ingredients, weighing 28.844g Bi 2 o 3 , 3.635g K 2 CO 3 , 2.851g ZnO, 4.157gSn, 35.707g[CH 3 (CH 2 ) 3 O] 4 Ti and 0.046g H 2 WO 4 ;

[0041] ②The preparation process is the same as the steps ②~⑩ in Example 1.

[0042] Prepared material properties are shown in Table 1 and figure 2 shown.

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Abstract

The invention relates to a high-Curie temperature (Tc) lead-free positive temperature coefficient (PTC) thermal sensitive ceramic material. A matrix of the high-Tc PTC thermal sensitive ceramic material is (Bi1-x / 2Kx / 2)(D1 / 2-x / 2Sn1 / 2-x / 2Tix)O3, wherein x is more than or equal to 0.01 and is less than or equal to 0.95, D is at least one of transition metal elements of Cu, Zn, Ni, Co and Fe. The high-Tc PTC thermal sensitive ceramic material does not contain lead, is suitable for the ordinary ceramic preparation process, and the calcining temperature and sintering temperature are less than 1,000 DEG C. According to the high-Tc PTC thermal sensitive ceramic material, the harm of lead to environment and human bodies in the process of manufacturing and using resistor elements is avoided, the technical problems of the ingredient design and material semiconductor of high-Tc lead-free PTC thermal sensitive ceramic resistance materials are solved, and the adjustability of the Curie temperaturerange from 120 to 300 DEG C is realized by regulating a formula of main ingredients.

Description

technical field [0001] The invention designs a semiconductor ceramic material, especially a lead-free high Curie point ferroelectric ceramic material to realize semiconduction, and prepares a lead-free high Curie point heat-sensitive ceramic material with a positive resistance temperature coefficient (PTC) effect. Background technique [0002] PTC thermosensitive ceramic is a semiconductor electronic ceramic material with a positive temperature coefficient of resistance (Positive Temperature Coefficient, referred to as PTC). This electronic ceramic component with PTC characteristics integrates heating and temperature control, and has the characteristics of automatic temperature control, safety and energy saving, automatic recovery, non-contact action, no open flame, and long life. The products can be used in heating components, temperature control, overcurrent protection, overheating protection, thermal induction and temperature alarm systems, and are widely used in automobi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/475
Inventor 张鸿李志成刘玉龙
Owner CENT SOUTH UNIV
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