Novel method for inspecting photolithographic process by utilizing optical proximity correction (OPC) models of post exposure bake
A lithography process and model inspection technology, which is applied in the photolithography process of the pattern surface, photosensitive material processing, optics, etc., can solve the problems of lithography defects and lithography rule errors, and cannot be detected
Active Publication Date: 2014-06-04
SHANGHAI HUALI MICROELECTRONICS CORP
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However, potential lithographic defects and lithographic rule errors that may occur throughout the layout cannot be detected
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[0018] The present invention will be further described below in combination with principle diagrams and specific operation examples.
[0019] Such as figure 2 Shown, a kind of novel method flow chart of the present invention utilizes the OPC model of post-exposure baking to check the photolithography process of the present invention, wherein, comprises the following steps:
[0020] S1: Establish the photolithography process and determine the photolithography process conditions;
[0021] In this step, according to the needs of lithography, predetermine the process condition parameters of lithography, including predetermine the temperature value required for the photoresist to be baked after exposure in the lithography process under normal process flow.
[0022] S2: collecting original photolithography layout data;
[0023] In this step, determine the design pattern that needs to be formed by lithography, collect and determine the original lithography layout data, the collect...
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The invention discloses a novel method for inspecting a photolithographic process by utilizing optical proximity correction (OPC) models of a post exposure bake, which comprises the steps of establishing the photolithographic process and determining conditions of the photolithographic process; collecting data of an original photolithography territory; determining the bake maximum temperature, exposing and baking photoresist, collecting data of the post exposure bake and establishing a first OPC model; determining the bake minimum temperature, exposing and baking the photoresist, collecting data of the minimum temperature of the post exposure bake and establishing a second OPC model; and respectively performing photolithography rule inspection on the first OPC model and the second OPC model by utilizing the data of the original photolithography territory, and determining whether photolithography defects exist. By establishing OPC models at different temperatures of post exposure, changes of graphs after photoetching at the different temperatures can be determined, and the temperature can be further regulated when the defects or dimension changes have serious problems to establish novel process conditions.
Description
technical field [0001] The invention relates to a method for inspecting a photolithography process, in particular to a novel method for inspecting a photolithography process using an OPC model baked after exposure. Background technique [0002] In the advanced photolithography process, Post Exposure Bake (PEB for short) is a very important step. Changes in the baking temperature will affect the final imaged lithographic feature size, known as post-exposure baking sensitivity (PEB Sensitivity). When a new photolithography process is established, it is necessary to evaluate the degree of influence. The existing practice is to change the post-exposure baking temperature, select one or more feature sizes of interest, and measure the line width under the electron microscope, so that it can be observed that one or more feature sizes deviate from the post-exposure baking temperature. Dimensional changes over time. However, potential lithographic defects and lithographic rule err...
Claims
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IPC IPC(8): G03F7/40G03F1/36
Inventor 魏芳张辰明
Owner SHANGHAI HUALI MICROELECTRONICS CORP