Method for preparing BiFeO3 ferroelectric thin film photovoltaic battery on glass substrate
A technology of ferroelectric thin films and glass substrates, which is applied in circuits, electrical components, and final product manufacturing to achieve the effects of wide sources, high consistency, and reduced production costs
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Embodiment 1
[0031] Bi(NO 3 ) 3 ·5H 2 O (5% excess), Fe(NO 3 ) 3 9H 2 O is completely dissolved in ethylene glycol methyl ether at a molar ratio of 1:1, and a brownish-red clear and stable precursor solution is obtained. Films were then prepared by the gel-spin method. The condition of glue rejection is as follows: 10 seconds at 500 rpm and 30 seconds at 3000 rpm. After spinning the glue, the substrate with the precursor wet film was first dried on a hot plate at 200°C for 3 minutes, then calcined at 350°C for 5 minutes, and finally in O 2 Sintering at 500° C. for 5 minutes in a rapid annealing furnace under atmosphere. After the first layer was calcined, the first layer was annealed, and then annealed once every two layers, a total of 15 layers of glue were thrown, and the BFO ferroelectric thin film was obtained.
[0032] The prepared film was prepared with a 0.5mm * Deposit 0.5mm on the film surface by physical sputtering method under the shield of the mask plate with 0.5mm hol...
Embodiment 2
[0034] Bi(NO 3 ) 3 ·5H 2 O (5% excess), Fe(NO 3 ) 3 9H 2 O is completely dissolved in ethylene glycol methyl ether at a molar ratio of 1:1, and a brownish-red clear and stable precursor solution is obtained. Films were then prepared by the gel-spin method. The condition of glue rejection is as follows: 10 seconds at 500 rpm and 30 seconds at 3000 rpm. After spinning the glue, the substrate with the precursor wet film was first dried on a hot plate at 200°C for 3 minutes, and then calcined at 350°C for 5 minutes. Finally at O 2 Sintering at 550° C. for 5 minutes in a rapid annealing furnace under atmosphere. After the first layer was calcined, the first layer was annealed, and then annealed once every two layers, a total of 15 layers of glue were thrown, and the BFO ferroelectric thin film was obtained.
[0035] The prepared film was prepared with a 0.5mm * Deposit 0.5mm on the film surface by physical sputtering method under the shield of the mask plate with 0.5mm ho...
Embodiment 3
[0037] Bi(NO 3 ) 3 ·5H 2 O (5% excess), Fe(NO 3 ) 3 9H 2 O is completely dissolved in ethylene glycol methyl ether at a molar ratio of 1:1, and a brownish-red clear and stable precursor solution is obtained. Films were then prepared by the gel-spin method. The condition of glue rejection is as follows: 10 seconds at 500 rpm and 30 seconds at 3000 rpm. After spinning the glue, the substrate with the precursor wet film was first dried on a hot plate at 200°C for 3 minutes, and then calcined at 350°C for 5 minutes. Finally at O 2Sintering at 600° C. for 5 minutes in a rapid annealing furnace under atmosphere. After the first layer was calcined, the first layer was annealed, and then annealed once every two layers, a total of 15 layers of glue were thrown, and the BFO ferroelectric thin film was obtained. The prepared film was prepared with a 0.5mm * Deposit 0.5mm on the film surface by physical sputtering method under the shield of the mask plate with 0.5mm hole * 0.5m...
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