Double-gate TFT (thin film transistor) substrate and production method thereof
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- BEIJING BOE OPTOELECTRONCIS TECH CO LTD
- Publication Date
- 2012-07-11
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention relates to the field of liquid crystal display manufacture, in particular to a double-gate TFT array substrate and a method for manufacturing the TFT array substrate. Background technique
[0002] TFT-LCD (Thin Film Transistor-Liquid Crystal Display, Thin Film Transistor-Liquid Crystal Display) uses the change of the electric field intensity sandwiched on the liquid crystal layer to change the orientation of liquid crystal molecules, thereby controlling the intensity of light transmission to display images. Generally speaking, a complete liquid crystal display panel must have a backlight module, a polarizer, a TFT lower substrate, a CF (color filter) upper substrate, and a liquid crystal molecule layer filled in a box composed of these two substrates. There are a large number of pixel electrodes on the TFT substrate, and the on-off and magnitude of the voltage on the pixel electrodes are controlled by the gate connected to the horizontal ...