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Reliable storage method for prolonging service life of flash memory

A technology of reliability and flash memory, which is applied in the field of flash memory, can solve the problems of low reliability of flash data writing and affect the lifespan, and achieve the effect of reducing the frequency of writing refresh, ensuring the service life and fast writing time

Active Publication Date: 2012-07-11
交控技术装备有限公司
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AI Technical Summary

Problems solved by technology

[0007] Aiming at the above-mentioned defects of the prior art, the present invention provides a reliable storage method for improving the lifetime of the flash memory in order to solve the technical problem in the prior art that the writing reliability of the flash memory data is low and affects the service life

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  • Reliable storage method for prolonging service life of flash memory
  • Reliable storage method for prolonging service life of flash memory

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Embodiment Construction

[0023] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0024] In the present invention, a static non-volatile RAM (Random Access Memory, random access memory), namely NVRAM (Non-Volatile Random Access Memory), is introduced into the flash memory to assist the flash memory to perform data recording and recovery. Since the data of NVRAM will not be lost after power failure, and the data storage time is very long after power failure, the integrity of data can be effectively guaranteed; on the other hand, the ...

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Abstract

The invention relates to the technical field of flash memories, in particular to a reliable storage method for prolonging the service life of a flash memory. The method comprises the following steps of: 1, after electrifying each time, checking temporary sectors of a non-volatile random access memory (NVRAM), judging whether at least two of four temporary sectors have the same content or not, if so, executing a step 2, otherwise, erasing the temporary sectors and executing a step 4; 2, judging whether every two of the four temporary sectors are the same or not, if so, recovering temporary sectors with larger serial numbers by using a first temporary sector and executing a step 3, otherwise, recovering minority sectors by using majority sectors and executing the step 3; 3, recovering contents of the current record sector of the flash memory by using contents in the temporary sectors; and 4, normally reading and writing data of the flash memory. By the method, the advantage that the NVRAM is short in write time is fully utilized, the temporary sectors of the NVRAM are taken as buffer and redundancy of data write, the data integrity of the flash memory is ensured, and the service life of the flash memory is prolonged.

Description

technical field [0001] The invention relates to the technical field of flash memory, in particular to a reliable storage method for improving the service life of flash memory. Background technique [0002] In the field of industrial control, flash memory (FLASH) is often used for data storage to record the operating status of on-site equipment in real time; Data analysis of equipment operation or control effects for evaluation, adjustment or improvement in later work. The flash memory used in the above applications is generally installed on the circuit board, and its volume and capacity are usually small; in addition, the above applications record the real-time operation status of the field equipment, and the data storage of the flash memory is characterized by a large number of records, The amount of data recorded each time is small and copied frequently. [0003] Although there are many forms of existing flash memory, and the reading and writing methods are also divided ...

Claims

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Application Information

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IPC IPC(8): G06F12/02
Inventor 李超楼宇伟姜宏飞
Owner 交控技术装备有限公司