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ESD protection device with tunable design windows

A device and area technology, applied in the field of ESD protection devices, can solve problems such as the inability to protect VDD

Active Publication Date: 2014-11-12
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this BJT device cannot be used to protect a circuit with a VDD of 16V and a breakdown voltage of 21V
This fixed design window is problematic for chips with multiple circuits requiring different hold and trigger voltages

Method used

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  • ESD protection device with tunable design windows
  • ESD protection device with tunable design windows
  • ESD protection device with tunable design windows

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] The making and using of preferred embodiments of the invention are discussed in detail below. It should be appreciated, however, that the present embodiments provide many applicable concepts that can be implemented in a wide variety of specific contexts. The specific embodiments discussed are merely illustrative of specific ways to make and use the invention, and do not limit the scope of the embodiments.

[0025] According to an embodiment, a novel electrostatic discharge (ESD) device including a bipolar junction transistor (BJT) is provided. Then, variations and operation of this embodiment are discussed. Like reference numerals refer to like parts throughout the various drawings and illustrated embodiments.

[0026] Figure 1AA cross-sectional view of an ESD device 30 including a PNP BJT 52 is shown according to an embodiment. ESD device 30 is formed over substrate 20 . In an embodiment, the substrate 20 is a semiconductor substrate, which may be a silicon subst...

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PUM

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Abstract

An electrostatic discharge (ESD) device includes a high-voltage well (HVW) region of a first conductivity type; a first heavily doped region of a second conductivity type opposite the first conductivity type over the HVW region; and a doped region of the first conductivity type contacting the first heavily doped region and the HVW region. The doped region is under the first heavily doped region and over the HVW region. The doped region has a first impurity concentration higher than a second impurity concentration of the HVW region and lower than a third impurity concentration of the first heavily doped region. The ESD device further includes a second heavily doped region of the second conductivity type over the HVW region; and a third heavily doped region of the first conductivity type over and contacting the HVW region.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of US Provisional Application No. 61 / 428,401, filed December 30, 2010, entitled "ESD Protection Device With Adjustable Design Window," the entire contents of which are hereby incorporated by reference. technical field [0003] The invention relates to the field of integrated circuits, and more specifically, to an ESD protection device. Background technique [0004] Electrostatic discharge (ESD) is a well-known problem in the manufacture and use of integrated circuits. Transistors have traditionally had thin oxide and insulating layers that can be damaged by electrostatic discharge, thus requiring special care to protect integrated circuits from damage caused by ESD phenomena. [0005] Various devices can be used as ESD devices. For example, resistor capacitor-metal oxide semiconductor (RC-MOS) devices are widely used for ESD protection purposes. During the occurrence of the ESD ph...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/02H02H9/04
CPCH01L27/0259
Inventor 郭锡瑜李介文张伊锋
Owner TAIWAN SEMICON MFG CO LTD