Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for manufacturing improved humidity sensor

A technology of a humidity sensor and a manufacturing method, applied in the field of sensors, can solve the problems of limited contact area and long response time, etc.

Inactive Publication Date: 2014-03-12
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
View PDF6 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The traditional capacitive humidity sensor is generally composed of two layers of electrodes and a layer of polymer material, which has the disadvantages of limited contact area with the surrounding environment and long response time.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for manufacturing improved humidity sensor
  • Method for manufacturing improved humidity sensor
  • Method for manufacturing improved humidity sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] At first, prepare to make the silicon chip 1 of humidity sensor (as figure 1 (a));

[0027] Fabrication of SiO on the front side 2 Layer 2, such as figure 1 as shown in (b),

[0028] (2) Then sputter metal seed layer 3 on silicon wafer 1, typical seed layer material

[0029] Including TiW / Cu (such as figure 1 (c));

[0030] (3) However, the capacitor electrode plate 4 is electroplated and the redundant seed layer is corroded. Typical electrode plate materials include Au, etc. (such as figure 1 (d));

[0031] (4) Coating polyimide 5 to make capacitor dielectric material (such as figure 1 (e));

[0032] (5) Utilize photolithography technique to make cavity 6 in polyimide, and solidify (as figure 1 (f));

[0033] exist figure 1 In (g), through-silicon vias are formed in the polyimide corresponding to the cavity 6, which can be produced by a wet method or a dry method.

[0034] The three-dimensional image of the fabricated humidity sensor is as follows: figure...

Embodiment 2

[0036] Such as image 3 As shown, multiple cavities were fabricated in the polyimide between the electrode plates along the direction of the electrode plates. The number of cavities is 2 or more. Under the condition of meeting the requirements of lithographic precision, the more the number of cavities and the smaller the opening of the cavities, the better the performance of the sensor should be.

Embodiment 3

[0038] The cavity in embodiment 1 is as Figure 4 As shown, multiple cavities were fabricated in the polyimide between the electrode plates perpendicular to the direction of the electrode plates. The number of cavities is 2 or more. Under the condition of meeting the requirements of lithographic precision, the more the number of cavities and the smaller the opening of the cavities, the better the performance of the sensor should be.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a method for manufacturing an improved humidity sensor. The method is characterized by comprising the following steps of: coating a polyimide film serving as a humidity sensitive material between electrode plates, making a cavity in the polyimide layer by using a photoetching technology, and forming silicon through holes in the bottom of the cavity by using a corrosion method. The contact area between the sensor and the surrounding environment is enlarged, and simultaneously gas conveniently passes through the sensor; and the sensor has the characteristic of short response time.

Description

technical field [0001] The invention relates to a manufacturing method of an improved humidity sensor, more precisely relates to a manufacturing method of a humidity sensor based on polyimide and silicon etched on the back, and belongs to the field of sensors. Background technique [0002] There are two main types of humidity sensors: resistive and capacitive. [0003] The characteristic of the resistive humidity sensor is that a film made of moisture-sensitive material is covered on the substrate. When the water vapor in the air is adsorbed on the moisture-sensitive film, the resistivity and resistance value of the element will change. Using this characteristic to measure humidity. [0004] Capacitive humidity sensors are generally made of polymer film capacitors. Commonly used polymer materials include polystyrene, polyimide, and cellulose acetate. When the ambient humidity changes, the dielectric constant of the humidity-sensitive capacitor changes, so that the capacita...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01N27/22
Inventor 宁文果罗乐徐高卫朱春生李珩
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com