Monitoring structure for resistance values of lead-out holes of P type buried layer

Abstract

The invention discloses a monitoring structure for resistance values of lead-out holes of a P type buried layer. An N type buried layer is encircled around the circumferential side of the P type buried layer of a monomer structure of the monitoring structure. By applying a positive potential to the N type buried layer, PN junctions around the P type buried layer can be offset reversely, so that current leaking away from a substrate can be reduced, and an isolating effect is achieved. The distance between the lead-out holes of the P type buried layer of the monitoring structure is smaller, and the width of a metal wire is larger, so that the current collecting capacity at a testing end can be increased greatly. A plurality of monomer structures are connected in series for forming the monitoring structure, so that monitored data are more accurate.

Description

technical field [0001] The invention relates to a monitoring structure of a semiconductor integrated circuit, in particular to a monitoring structure of the resistance value of a lead-out hole of a P-type buried layer. Background technique [0002] Such as figure 1 As shown, it is a schematic diagram of the monitoring structure of the existing P-type buried layer lead hole resistance value, shallow groove isolation or field oxygen are formed on the P-type substrate, and the monitoring structure includes a single structure, and the single structure It includes: a P-type buried layer, the P-type buried layer is formed at the bottom of the shallow trench isolation or the field oxygen. Two extraction holes are formed in the shallow trench isolation or the field oxygen on the top of the P-type buried layer, and the extraction holes are filled with metal and connected to the P-type buried layer. During the test, the two lead-out holes are respectively connected to the high and l...

AI Technical Summary

Problems solved by technology

[0003] When the existing monitoring structure is tested, although there is a potential difference between the P-type substrates, the potentials of the P-type substrate and the P-type buried layer are the same, and a large amount of current will flow away from the P-type substrate, so it cannot be more accurate. to monitor the resistance value of the P-type buried layer lead-out hole

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