Four-level topological unit and application circuit thereof
A four-level, topological technology that is applied to electrical components, output power conversion devices, and conversion of AC power input to DC power output. It can solve problems such as increasing the cost of the inverter and increasing the difficulty of packaging the inverter.
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[0065] For clarity of description, a brief description of English abbreviations and terms appearing below:
[0066] IGBT: Insulated Gate Bipolar Transistor, insulated gate bipolar transistor;
[0067] MOSFET: Metal-Oxide-Semiconductor Field-Effect Transistor, Metal-Oxide-Semiconductor-Field-Effect Transistor, referred to as Metal-Oxide-Semiconductor Field-Effect Transistor;
[0068] IGCT: Integrated Gate Commutated Thyristors, integrated gate commutated thyristors;
[0069] IEGT: Injection Enhanced Gate Transistor is an IGBT series power electronic device with a withstand voltage above 4KV.
[0070] The invention discloses a four-level topology unit applied to a four-level inverter, which can reduce the number of semiconductor devices in the four-level inverter, and effectively reduce the cost and packaging difficulty of the four-level inverter. In addition, the invention also discloses a variety of four-level inverters using the four-level topological unit.
[0071] In ord...
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