Automatic real-time pulse measuring device and method for threshold voltage parameter of field-effect transistor

Abstract

The invention provides an automatic real-time pulse measuring device and method for a threshold voltage parameter of a field-effect transistor. At a source signal generating end, a direct current voltage power supply used in measurement before is replaced by a programmed control multifunctional signal generating module; the programmed control multifunctional signal generating module is used for supplying pulse voltage to a grid and drain of a to-be-measured field-effect transistor, so that the pulse voltage of the grid has a higher peak change speed; and at a measuring end, an ampere meter used in measurement before is replaced by a high-speed voltage data acquisition module and a variable resistance structure, so that the measurement can be performed under the voltage changing more quickly. Thus, compared with the traditional measuring device, the automatic measuring device provided by the invention has the advantages of wider measuring range and more accurate measuring result. Besides, during the whole measuring process, the data of the high-speed voltage data acquisition module is received and stored by a computer control module, the drawing is automatically finished, and the test speed is accelerated.

Description

technical field [0001] The invention relates to the field of semiconductor device performance testing, in particular to a pulse real-time field effect transistor threshold voltage parameter automatic measurement device and a method thereof. Background technique [0002] With the widespread use of MOS devices, the need to observe and monitor MOSFET bias temperature instability has gradually increased. Bias temperature instability refers to the fact that the threshold voltage of a MOSFET exhibits unstable characteristics under a certain bias and temperature. Typically, a 10% change in threshold voltage can cause logic and memory circuits to fail to start up properly. Therefore, it is of great significance to measure the variation of the threshold voltage. [0003] There are currently two companies with quite advanced technologies in this field, they are Keithley and Agilent. The core measurement method for the type of products they make is an indirect measurement method cal...

AI Technical Summary

Problems solved by technology

If the bias temperature stress time of the MOSFET is 24 hours, a short peak duration (such as 200 microseconds) will generate too many test points (such as 4.32×108 test points); and a long peak duration (such as 1 seconds), it will not be possible to test the magnitude and change of the threshold voltage within 1 second

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