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Secondary development method

A developing method and developing solution technology, which are applied in the processing of photosensitive materials, etc., to achieve the effects of reducing usage, increasing developing time, and good developing effect

Inactive Publication Date: 2012-08-01
CSMC TECH FAB1 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The technical problem to be solved by the present invention is to improve the developing effect and reduce the waste of developing solution

Method used

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Embodiment Construction

[0033] Presented below are some of the many possible embodiments of the invention, intended to provide a basic understanding of the invention. It is not intended to identify key or critical elements of the invention or to delineate the scope of protection. It is easy to understand that, according to the technical solution of the present invention, those skilled in the art may propose other alternative implementation manners without changing the essence and spirit of the present invention. Therefore, the following specific embodiments and drawings are only exemplary descriptions of the technical solution of the present invention, and should not be regarded as the entirety of the present invention or as a limitation or restriction on the technical solution of the present invention.

[0034] Figure 4 Shown is a schematic flowchart of a developing method provided according to an embodiment of the present invention. Figure 4 The developing method shown can be applied to the wet...

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Abstract

The invention provides a secondary development method, which belongs to the semiconductor device manufacture photolithography field. The secondary development method is used for carrying out wet method development for exposed photoresist at same layer, and comprises the following steps: 1) coating a developing solvent on the photoresist for fist time; 2) infiltrating the photoresist for first time for preliminary development; 3) basically removing a development resultant on the photoresist surface and the residual developing solvent; 4) coating the developing solvent for the second time on the photoresist; and 5) infiltrating the photoresist for the second time for overall development. The development method has the advantages of low cost and good development effect, and can not increase the development time integrally.

Description

technical field [0001] The invention belongs to the technical field of photolithography for semiconductor manufacturing, and relates to a developing method of the photolithographic process, in particular to a wet developing method using secondary development for the exposed photoresist of the same layer. Background technique [0002] In semiconductor manufacturing technology, photolithography is widely used to pattern thin films to form chips. In the photolithography process, the process of exposure and development must be included. Among them, wet development is a common development method, which utilizes the chemical reaction between the developer and the exposed or unexposed photoresist (judged according to whether the photoresist is positive or negative), so that part of the photoresist is dissolved in the A developer is used to form a pattern on the photoresist. [0003] figure 1 Shown is a schematic flow chart of the existing developing method. Such as figure 1 As...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/30G03F7/42
Inventor 钱志浩燕丽林
Owner CSMC TECH FAB1
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