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Method for managing blocks, memory device and controller thereof

A memory device and controller technology, applied in the field of flash memory access, can solve problems such as inability to guarantee processing performance, and achieve the effect of taking into account both operational performance and system resource usage control

Active Publication Date: 2015-02-25
SILICON MOTION INC (CN)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The technical problem to be solved by the present invention is to provide a method for block management and to address the defect that the management mechanism of the prior art cannot guarantee the best processing performance when it is matched with a multi-channel flash memory for clearing operation. Related memory device and controller thereof, to solve the above problems

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  • Method for managing blocks, memory device and controller thereof
  • Method for managing blocks, memory device and controller thereof
  • Method for managing blocks, memory device and controller thereof

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Embodiment Construction

[0047] Please refer to Figure 1A , Figure 1A It is a schematic diagram of a memory device 100 according to a first embodiment of the present invention, wherein the memory device 100 of this embodiment is especially a portable memory device (for example: a memory card conforming to SD / MMC, CF, MS, XD standards in) or solid state drive (SSD, Solid State Drive), etc. The memory device 100 includes: a flash memory (Flash Memory) 120, which includes at least one information block (Block) 120B; and a controller, used for access (Access) flash memory 120, wherein the controller is such as a memory controller 110. According to this embodiment, the memory controller 110 includes a microprocessor 112 , a read only memory (ROM) 112M, a control logic 114 , at least one buffer memory 116 , and an interface logic 118 . In addition, the ROM 112M of this embodiment is used to store a program code 112C, and the microprocessor 112 is used to execute the program code 112C to control access to...

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Abstract

The invention provides a method for managing blocks. The method is applied to a controller of a flash memory with a plurality of channels. The flash memory comprises a plurality of blocks respectively corresponding to the channels. The method comprises the following steps of: selecting at least one meta block with at least one valid page as at least one candidate meta block for cleaning and accumulating the valid page counts of the blocks respectively corresponding to the channels in the at least one candidate meta block to generate a plurality of accumulated values respectively corresponding to the channels; and when detecting that all the accumulated values reach a threshold, triggering a cleaning operation aiming at all the candidate meta blocks so as to move / copy the valid data respectively corresponding to the channels while carrying out the cleaning operation. According to block management achieved by the method, the best treatment efficiency is achieved when the cleaning operation is carried out in the flash memory with the plurality of channels; and the goal of giving consideration to the operation efficiency and system resource use control and management can be achieved under the condition of not substantially increasing area or cost of a chip.

Description

technical field [0001] The present invention relates to the access of multi-channel flash memory (Flash Memory), and more specifically, to a method for block management, a related memory device and a controller thereof. Background technique [0002] In recent years, due to the continuous development of flash memory technology, various portable memory devices (for example: memory cards conforming to SD / MMC, CF, MS, XD standards) or solid state drives (Solid State Drive, SSD) with flash memory are widely used implemented in many applications. Therefore, the access control of the flash memory in these memory devices has become a very hot topic. [0003] As far as the commonly used NAND flash memory is concerned, it can be mainly divided into two types of flash memory: single level cell (Single Level Cell, SLC) and multiple level cell (Multiple Level Cell, MLC). Each transistor in the single-level cell flash memory, which is regarded as a memory unit, has only two charge value...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F12/06
Inventor 沈扬智
Owner SILICON MOTION INC (CN)