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Method for improving light emitting efficiency of ultraviolet light emitting diode

A technology of light emitting diodes and light extraction efficiency, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of low light extraction efficiency, difficulty in roughening, and inability to roughen, and achieve the effect of broad application prospects.

Inactive Publication Date: 2012-09-05
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

At present, the light extraction efficiency of UV light-emitting diodes is relatively low
Low light extraction efficiency severely limits the light output power of UV LEDs
The light extraction efficiency of the flip-chip UV light-emitting diode can be improved by roughening the back of the sapphire, but roughening on the sapphire substrate is relatively difficult, so roughening cannot be done simply and conveniently.

Method used

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  • Method for improving light emitting efficiency of ultraviolet light emitting diode
  • Method for improving light emitting efficiency of ultraviolet light emitting diode

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Embodiment Construction

[0020] see figure 1 As shown, the present invention provides a method for improving the light extraction efficiency of ultraviolet light-emitting diodes, comprising the following steps:

[0021] Step 1: an ultraviolet light-emitting diode epitaxial wafer 10, which is an epitaxial wafer grown epitaxially on a sapphire substrate 101 by MOCVD or MBE method, and the epitaxial layer part of the epitaxial wafer mainly includes a low-temperature buffer layer, a high-temperature template layer, a N row layer, multi-quantum well active region, electron blocking layer and P-type layer;

[0022] Step 2: growing a nitride layer 11 on the back of the sapphire substrate 101 of the UV light emitting diode epitaxial wafer 10;

[0023] Step 3: Roughen the surface of the nitride layer 11 to complete the preparation.

[0024] The emission wavelength range of the ultraviolet light emitting diode is 210nm-365nm.

[0025] The nitride layer 11 is Al x Ga 1-x N, wherein 0≤x≤1, the selection of A...

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Abstract

The invention discloses a method for improving light emitting efficiency of an ultraviolet light emitting diode, which comprises the following steps: 1) providing an ultraviolet light emitting diode epitaxial wafer; 2) growing one nitride layer on the back of a sapphire substrate of the ultraviolet light emitting diode epitaxial wafer; and 3) coarsening the surface of the nitride layer to finish the preparation. The method is simple, convenient and easy to realize, and can be compatible with the conventional LED (Light Emitting Diode) technology.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a method for improving the light extraction efficiency of an ultraviolet light emitting diode. Background technique [0002] Nitride-based light-emitting diodes have been widely developed worldwide due to their advantages of high efficiency, energy saving, environmental protection, long life, small size, low voltage and fast response. Ultraviolet light-emitting diodes with a light emission wavelength of 210-365nm have the advantages of high modulation frequency, low noise, mercury-free, environmental protection and high sterilization potential, and are widely used in sterilization, biomedicine, lighting, high-density storage, security and communication, etc. Field applications have broad application prospects. Currently, the light extraction efficiency of UV LEDs is relatively low. The low light extraction efficiency severely limits the light output power of UV LEDs. Th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00
Inventor 董鹏王军喜闫建昌张逸韵孙莉莉曾建平李晋闽
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI