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Exposure control method for imaging of complementary metal-oxide-semiconductor (CMOS) image sensor

An image sensor and exposure control technology, applied in image communication, color TV parts, TV system parts, etc., can solve the problems of slow adjustment speed and fast adjustment speed

Inactive Publication Date: 2012-09-12
BEIJING HANBANG GAOKE DIGITAL TECH
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AI Technical Summary

Problems solved by technology

If the adjustment step is too large, light and dark jitter is prone to occur, but the adjustment speed is faster; if the adjustment step is too small, light and dark jitter is less likely to occur, but the adjustment speed is slow

Method used

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  • Exposure control method for imaging of complementary metal-oxide-semiconductor (CMOS) image sensor
  • Exposure control method for imaging of complementary metal-oxide-semiconductor (CMOS) image sensor
  • Exposure control method for imaging of complementary metal-oxide-semiconductor (CMOS) image sensor

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Embodiment Construction

[0021] This exposure control method in CMOS image sensor imaging divides the light brightness according to 5 levels, and establishes a mathematical model of exposure characteristics. The light intensity under this mathematical model describes the light brightness of each level, and at the same time establishes the corresponding light intensity exposure parameter comparison. Table; calculate the statistical value of the brightness of the current frame by partition weighted statistics, and read the current exposure parameters, and calculate the light intensity under the mathematical model of the current exposure characteristics; use the look-up method to complete the exposure parameters in the light intensity exposure parameter comparison table preset settings. The present invention mainly changes the traditional step-by-step exposure parameter adjustment method, uses the exposure characteristic mathematical model to describe the light intensity characteristics, and realizes the ...

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Abstract

The invention discloses a rapid and automatic exposure control method for the imaging of a complementary metal-oxide-semiconductor (CMOS) image sensor. The number of stepping regulation times is reduced. The method comprises the following steps of: dividing illumination brightness into five grades, establishing an exposure characteristic mathematical model, describing each grade of illumination brightness according to light intensity under the mathematical model, and establishing a corresponding light intensity exposure parameter comparison table; calculating a statistical brightness value of a current frame in a partition weight statistics way, reading current exposure parameters, and calculating light intensity under a current exposure characteristic mathematical model; and finishing presetting exposure parameters in the light intensity exposure parameter comparison table in a table lookup way.

Description

technical field [0001] The invention belongs to the technical field of security monitoring, and in particular relates to an exposure control method in CMOS image sensor imaging. Background technique [0002] During the imaging process of a CMOS image sensor (CMOS image sensor, CIS), exposure has a great influence on image quality. Overexposure will make the image too bright and make the image appear to be bleached, losing image detail; while underexposure will cause the image to be too dark and image detail will be lost. Overexposure and underexposure will cause the three primary color values ​​of pixels to exceed the maximum dynamic range of CIS, and effective color restoration cannot be performed, which will have a great impact on subsequent image processing. Therefore, correct exposure is of great significance. [0003] The key to automatic exposure control is how to calculate the optimal exposure time and its corresponding analog gain and digital gain. In order to prev...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04N5/235H04N5/351
Inventor 丘江郜向阳郭波
Owner BEIJING HANBANG GAOKE DIGITAL TECH
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