Solid state imaging device, method of producing solid state imaging device, and electronic apparatus

A technology of solid-state imaging device and manufacturing method, which is applied in the direction of electric solid-state devices, radiation control devices, circuits, etc., can solve problems such as difficult design, and achieve the effect of increasing production and reducing changes

Active Publication Date: 2012-09-26
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In such a structure, the transfer channel and the overflow channel are basic

Method used

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  • Solid state imaging device, method of producing solid state imaging device, and electronic apparatus
  • Solid state imaging device, method of producing solid state imaging device, and electronic apparatus
  • Solid state imaging device, method of producing solid state imaging device, and electronic apparatus

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Experimental program
Comparison scheme
Effect test

no. 1 approach

[0034] 1. First Embodiment: Solid-state Imaging Device

[0035] 1-1. Overall structure of solid-state imaging device

[0036] 1-2. Structure of main parts

[0037] 1-3. Manufacturing method

[0038] 1-4. Operation

[0039] 1-5. Modification 1

[0040] 1-6. Modification 2

no. 2 approach

[0041] 2. Second Embodiment: Manufacturing Method of Solid-State Imaging Device

no. 3 approach

[0042] 3. Third Embodiment: Manufacturing Method of Solid-State Imaging Device

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PUM

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Abstract

The invention discloses a solid state imaging device, a method of producing solid state imaging device, and an electronic apparatus. A solid state imaging device includes: a substrate; a photoelectric conversion unit that is formed on the substrate to generate and accumulate signal charges according to light quantity of incident light; a vertical transmission gate electrode that is formed to be embedded in a groove portion formed in a depth direction from one side face of the substrate according to a depth of the photoelectric conversion unit; and an overflow path that is formed on a bottom portion of the transmission gate to overflow the signal charges accumulated in the photoelectric conversion unit.

Description

[0001] Cross References to Related Applications [0002] This application contains subject matter related to that disclosed in Japanese Priority Patent Application JP 2011-063974 filed in the Japan Patent Office on Mar. 23, 2011, the entire content of which is hereby incorporated by reference. technical field [0003] The present invention relates to a solid-state imaging device having a vertical transistor, a method of manufacturing the solid-state imaging device, and electronic equipment provided with the solid-state imaging device. Background technique [0004] The solid-state imaging device is classified into an amplifying solid-state imaging device represented by a device such as a complementary metal oxide semiconductor (Complementary Metal Oxide Semiconductor, CMOS) image sensor, or a solid-state imaging device represented by a device such as a charge coupled device (Charge Coupled Device, CCD). The device is a representative charge transport type solid-state imaging ...

Claims

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Application Information

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IPC IPC(8): H01L27/146
CPCH01L27/14607H01L27/1461H01L27/14641H01L27/14656H01L27/14689H01L27/14612H01L27/14643H01L27/14614H01L27/14625H01L27/1464
Inventor 中村良助
Owner SONY CORP
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