Self-adaptive sapphire crystallization furnace

Abstract

The invention relates to a sapphire crystallization furnace, in particular to a heat-exchange sapphire crystallization furnace which comprises a furnace body, a crucible, a thermal insulation device, a heating device, and a heat exchanger. The furnace body is a closed container comprising a furnace cover and a furnace bottom plate. The crucible is a container for sapphire crystallization. The thermal insulation device surrounds the crucible inside the furnace body and is used for maintaining a heat field for the crucible. The heating device provides heat required by sapphire growth. The heat exchanger comprises a holder arranged at the bottom of the crucible, a heat exchange pipe connected with the holder, and a compressor allowing for circulation of a cooling medium in the heat exchange pipe. A jacket mechanism is distributed on a portion of the heat exchange pipe, which is located outside the furnace body. The heat exchange pipe is fixedly connected with the furnace bottom plate through the jacket mechanism. The sapphire crystallization furnace is characterized in that a closed elastic telescopic corrugated pipe is arranged between a jacket joint of the jacket mechanism and the furnace bottom plate. The sapphire crystallization furnace self-adaptive to load is adaptive to loads of different weights, appearance of the heat exchange pipe can be kept complete constantly, and stable position of the heat exchange relative to the crucible can be kept constantly.

Description

technical field [0001] The invention relates to a sapphire crystal growth furnace, in particular to a heat exchange method sapphire crystal growth furnace. Background technique [0002] The structure of the existing heat exchange sapphire crystal growth furnace is as follows: figure 1 As shown, the heat exchange tubes of the heat exchange device are fixed in position before charging, and then remain in a relatively static state with the furnace body. [0003] The disadvantages of this structural sapphire crystal growth furnace are: [0004] 1. After installing the crucible after the heat exchange device is fixed, it is necessary to precisely adjust the support ring supporting the crucible to ensure that the center position of the crucible coincides with the center position of the heat exchange device. Purpose, and it takes a lot of time, which directly affects production efficiency; [0005] 2. After the crucible is fixed in position, under the condition of loading heavy ...

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Problems solved by technology

[0004] 1. After installing the crucible after the heat exchange device is fixed, it is necessary to precisely adjust the support ring supporting the crucible to ensure that the center position of the crucible coincides with the center position of the heat exchange device. Purpose, and it takes a lot of time, which directly affects production efficiency;

[0005] 2. After the crucible is fixed first, under the condition of loading heavy raw materials, the heat exchanger is easily deformed due to the action of gravity, which may also cause the deflection and displacement of the seed crystal in the crucible, affecting the crystal quality and the service life of the heat exchanger

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